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suppliers of STB-GP and PDF data of STB-GP

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
STB-GP	15	new&origin	N/A		2008+	saviliter technology co.,ltd Contact:rebecca Tel:86-10-62102365 Fax: Email: rebecca@saviliter-ic.com
STB-GP	ANA	roch	0	现货订货，只做全新原装货	15	North Technology Co.,Ltd Contact:JOJO Tel:86-10-82637263 Fax:86-10-82639385 Email: jojo@northelec.com

STB-GP Datasheet

Right to make changes - Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status 'Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
STB-GP Price

Cha racteristics Symbol Test Conditions	Min	Typ	Max	Units
Input Capacitance Cies		162		nF
Output Capacitance Coes VGE = OV VCE = 10V		12.0		nF
Reverse Transfer Capacitance Cres		3.6		nF
Resistive Turn-on Delay Time td(on) VCC = 2250V, lc = 900A,			2 4
Load Rise Time tr VGEl = VGE2 = 15V,			2 4
Switching Turn-offDelayTime td(off) RG=iol			6 0
Times Fall Time tf Resistive Load Switching Operation			1 2
Diode Reverse Recovery Time" trr IE = 900A, diE/dt = -1800A/os			1 8
Diode Reverse Recovery Charge" Qrr IE = 900A, diE/dt = -1800A/oS		360*		c
' Pulse width and repetition rate should be such that device junction temperature rise is negligible "Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units
Thermal Resistance, Junction to Case RthO_c) Q Per IGBT			0 010	K/W

STB-GP on stock

ADDITIONAL ELECTRICAL DATA
DESCRIPTION	CONDITIONS	VALUE
VOLTAGE
Surge voltage		Us1.15×UR
Reverse voltage		Urev1 V
CURRENT
Leakage current	after 2 minutes at UR	IL2 < O.OICR X UR or 3 yA (whichever is greater)
RESISTANCE
Equivalent series resistance (ESR)	calculated from tan 8max and CR (see Table )	ESR = tan 8/2fCR

Memory capacity . Program memory (PROM): 16256 x 8 bits . Data memory (RAM): 1024 x 4 bits Internal pull-up resistors can be specified by software: Ports 0-3, 6-8 Internal pull-down resistors can be specified by software: Port 9 Open-drain input/output: Ports 4, 5, 10

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