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STB50N06VL Datasheet Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Toky0 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/heUecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Ltd. (America) Inc. Electronic Components Group Hitachi Tower 179 East Tasman Drive, Dornacher Strape 3 16 Collyer Quay #20-00, San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Tel: <1> (408) 433-1990 Germany Tel: <65>-538-6533/538-8577 Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax : <65>-538-6933/538-3877 Fax: <49> (89) 9 29 30 00 URL : http://www.hitachi.com.sg STB50N06VL Price s Uses Off-the-Shelf Inductors s Only 33~H Inductor Required s Low Cost s 3-Lead T0-92, S08, or 8-Pin DIP s Adjustable or Fixed 5V or 12V Output s 120kHz Oscillator s Only Three External Components Required s 320lo s 1.6V Minimum Start-Up Voltage s Logic Controlled Shutdown STB50N06VL on stock Electrical Characteristics at Ta= 250C Collector CutoffCurrent ICBO Emitter CutoffCurrent IEBO DC Current Gain hFE Gain-Bandwidth Product fT Base to Collector Time rbb'cc Constant Output Capacitance Cab Reverse Transfer Capacitance Cre C-E Saturation Voltage VCE{sat) B-E Saturation Voltage VBE{sat) C-B Breakdown Voltage V(BR)CBO C-E Breakdown Voltage V(BR)CEO E-B Breakdown Voltage V(BR)EBO
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