| PARAM ETER | SYM BOL | MIN | MAX | UNIT | CON DITIONS |
| Drain-Source Breakdown Voltage | BVDSS | 200 | | V | ID=lmA, VGS=OV |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 1 5 | V | ID=lmA, VDS= VGS |
| Gate-Body Leakage Zero Gate Voltage Drain Current | IGSS IDSS | | 100 10 100 | nA ccA ccA | VGS=+ 20V, VDS=OV VDS=200 V, VGS=O VDS=160 V, VGS=OV, T=1250C(2) |
| On-State Drain Current(l) | ID(on) | 500 | | mA | VDS=25 V, VGS=5V |
| Static Drain-Source On-State Resistance (1) Forward Transconductance | RDS(on) 9fs | 200 | 10 10 | l l mS | VGS=5V,ID=250mA VGS=3V, ID=125mA VDS=25V,ID=250mA |
| Input Capacitance (2) | ciss | | 85 | pF | |
| Common Source Output Capacitance (2) | coss | | 20 | pF | VDS=25 V, VGS=OV, f=lM Hz |
| Reverse Transfer Capacitance (2) | Crss | | 7 | pF |
| Turn-On Delay Time (2)(3) | td(on) | | 8 | ns | |
| Rise Tim e (2)(3) | tr | | 8 | ns | VDD5V, ID=250mA |
| Turn-Off Delay Time (2)(3) | td (off) | | 20 | ns |
| Fall Tim e (2)(3) | tf | | 12 | ns |
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