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suppliers of STC-A22O50C2 and PDF data of STC-A22O50C2

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
STC-A22O50C2			05+		300	A-RICH HK LECTRON CO.,LIMITED Contact:JING ZHOU Tel:86-755-33377586 Fax:86-755-33377578 Email: ARICH2@yahoo.cn

STC-A22O50C2 Datasheet

WE	BWa BWb BWc	BWd	OPERATION
H	X X X	x	READ
L	L H H	H	WRITE BYTE a
L L L L L	HLH HHL HHH LLL HHH	H H L L H	WRITE BYTE b WRITE BYTE c WRITE BYTE d WRITE ALL BYTEs WRITE ABORT/NOP

STC-A22O50C2 Price

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCBO	collector-base voltage	open emitter		-40	V
VCEO	collector-emitter voltage	open base		-40	V
VEBO	emitter-base voltage	open collector		-6	V
lc	collector current (DC)			-200	mA
ICM	peak collector current			-300	mA
IBM	peak base current			-100	mA
Ptot	total power dissipation	Tamb25 0C		500	mW
Tstg	storage temperature		-65	+150	oC
Tj	junction temperature			150	oC
Tamb	operating ambient temperature		-65	+150	oC

STC-A22O50C2 on stock

					CY62136V-55			CY62136V-70
Parameter	Description	Test Conditions			Min	Typ.[2]	Max	Min	Typ.[2]	Max	Unit
VOH	Output HIGH Voltage	IOH= -1.0 mA	Vcc= 2.7V		2.4			2.4			V
VOL	Output LOW Voltage	IOL= 2.1 mA	Vcc= 2.7V				0.4			0.4	V
VIH	Input HIGH Voltage		Vcc= 3.6V		2.2		Vcc+ 0.5V	2.2		Vcc+ 0.5V	V
VIL	Input LOW Voltage		Vcc= 2.7V		-0.5		0.8	-0.5		0.8	V
I	Input Load Current	GND< Vi< Vcc		Industrial	1		+1	1		+1
I	Input Load Current	GND< Vi< Vcc		Automotive				-10		+10	LIA
102	Output Leakage	GND < Vo < Vcc,		Industrial	1		+1	1		+1	uA
102	Current	Output Disabled		Automotive				-10		+10	uA
lcc	Vcc Operating	f = fMAX = 1/tRC,	Vcc = 3.6V,	Industrial		7	20		7	15	mA
	Supply	f = fMAX = 1/tRC,	IOUT = 0 mA,	Automotive					7	20	mA
	Current	f=l MHz,	CMOS Levels			1	2		1	2	mA
ISB1	Automatic CE Power-down Current- CMOS Inputs	CE > Vcc-0.3V, VIN > Vcc-0.3V or VIN < 0.3V, f = fMAX					100			100	uA
ISB2	Automatic CE	CE > Vcc-0.3V	Vcc= 3.6V	IndustriaI(LL)		1	15		1	15	uA
	Power-down	VIN > Vcc-0.3V or		IndustriaI(SL)		1	5		1	5	uA
	Current- CMOS Inputs	VIN 0.3V, f = 0		Automotive					1	20	uA

Parameter	Symbol	Conditions	Values			Unit
Parameter	Symbol	Conditions	min	typ.	max	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS=OV, /D=0.25mA	600			V
Drain-Source avalanche breakdown voltage	V(BR)DS	VGS=OV, /D=4.5A		700
Gate threshold voltage	VGS(th)	/D=200htA, VGS=VDS	3.5	4.5	5.5
Zero gate voltage drain current	/DSS	VDS=600V, VGS=OV, Tj=250C, Tj=1500C		0.5	1 50	UA
Gate-source leakage current	GSS	VGS=20V, VDS=OV			1 00	nA
Drain-source on-state resistance	RDS(on)	VGS=10V, /D=2.8A, Tj=250C Tj=1500C		0.85 2.3	0.95	Q
Gate input resistance	RG	f=lMHz, open Drain		20		Q