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STC12LE5406-35C-SOP-28 Datasheet
The DPM 3is thelargest in our sub-miniature series of meters but still uses the same miniaturisation techniques to produce a very compact instrument. The snap-in integral bezel makesinstallation easy. For single rail operation, the DPM 3Sfeatures a built in negative rail generator, enabling themeter to measu reasgnal referen oed toitsown pow er su pply OV
STC12LE5406-35C-SOP-28 Price

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STC12LE5406-35C-SOP-28 on stock

Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage VGES +20 Volts
Collector Current lc 75 Amperes
Peak Collector Current ICM 150* Amperes
Diode Forward Current IF 75 Amperes
Diode Forward Surge Current IFM 150* Amperes
Power Dissipation Pd 600 Watts
Max. Mounting Torque M5 Terminal Screws 17 in-lb
Max. Mounting Torque M5 Mounting Screws 17 in-lb
Module Weight (Typical) 830 Grams
V Isolation VRMS 2500 Volts
' Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions Min Typ Max Units
Collector-Cutoff Current ICES VCE = VCES,VGE = OV 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = OV 0 5
Gate-Emitter Threshold Voltage VGE(th) lC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) lC = 75A, VGE = 15V 2.5 3.4¨ Volts
lc = 75A, VGE = 15V, Tj = 150IC 2 25 Volts
Total Gate Charge QG VCC = 600V, lc = 75A, VGS = 15V 375 nC
Diode Forward Voltage VFM IE = 75A, VGS = OV 3.4 Volts
" Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 1C unless otherwise specified
Cha racteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies 15 nF
Output Capacitance Coes VGE = OV, VCE = iov f = 1MHz 5.3 nF
Reverse Transfer Capacitance Cres 3 nF
Resistive Turn-on Delay Time td(on) 150 ns
Load Rise Time tr VCC = 600V,lc = 75A, 350 ns
Switching Turn-off Delay Time td(off) VGEl = VGE2 = 15V, RG = 4.2 I 250 ns
Time FaIITime tf 350 ns
Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/os 250 ns
Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/os 0 56 c
Thermal and Mechanical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions Min. Typ. Max. Units


The Philips FZPTM CPLDs introduce the new patent-pending XPLATM (eXtended Programmable Logic Array) architecture. The XPLATM architecture combines the best features of both PLA and PALTM type structures to deliver high speed and flexible logic allocation that results in superior ability to make design changes with fixed pinouts. The XPLATM structure in each logic block provides a fast 8ns PALTM path with 5 dedicated product terms per output. This PALTM path is joined by an additional PLA structure that deploys a pool of 32 product terms to a fully programmable OR array that can allocate the PLA product terms to any output in the logic block. This combination allows logic to be allocated efficiently throughout the logic block and supports as many as 37 product terms on an output. The speed with which logic is allocated from the PLA array to an output is only 2.5ns, regardless of the number of PLA product terms used, which results in worst case tPD'S of only 10.5ns from any pin to any other pin. In addition, logic that is common to multiple outputs can be placed on a single PLA product term and shared across multiple outputs via the OR array, effectively increasing design density.