STC4081 -DG Datasheet| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | | Collector-base voltage (Emitter open) | VCBO | Ic = -1 rriA, IE = 0 | -50 | | | V | | Collector-emitter voltage (Base open) | VCEO | Ic = -2 rliA, IB = 0 | -40 | | | V | | Collector-base cutoff current (Emitter open) | ICBO | VCB = -20 V, IE = O | | | -1 | yA | | Collector-emitter cutoff current (Base open) | ICEO | VCE = -10 V.IB = O | | | -100 | LLA | | Emitter-base cutoff current (Collector open) | IEBO | VEB = -5 V,IC = 0 | | | -10 | yA | | Forward current transfer ratio :i:l, 2 | hFE | VCE = -5 V,IC = -1 A | 80 | | 220 | | | Collector-emitter saturation voltage 'F1 | VCE(szu) | IC = -1.5 A, IB = - 0.15 A | | | -1 | V | | Base-emitter saturation voltage kl | VBE(sat) | Ic = -2 A,IB = - 0.2 A | | | -1.5 | V | | Transition frequency | fT | VCB = -5 V,IE = 0.5 A, f= 200 MHz | | 150 | | MHz | | Collector output capacitance (Common base, input open circuited) | Cob | VCB = -20 V, IE = 0, f= 1 MHz | | 45 | | pF | | | | | | | |
STC4081 -DG Price Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (Ml) Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKY0 108-8507. Tel. +81 3 3740 5130. Fax. +81 3 3740 5057 STC4081 -DG on stock| | | | | | | | | | Cis | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | Coss | | | | | | | | j| | | | ~j | | | C | h= | | 50c | | | t | | | | | | = | = 1MHz | | | | 1 | Lrss | | - VGs= OV | | | | | | 1 | | | | | | | | | | | |
| Parameter | Test Conditions | Min | Typ. | Max | Unit | | 30u rce BVDSS 9rr::kdSw own Voltage | VGS = 0 ID = 10mA | 40 | | | V | | ate Voltage IDSS ~:,,GCatrr urrent | VDS = 12.5V VGS = 0 | | | 1 | mA | | IGSS Gate Leakage Current | VGS = 20V VDS = 0 | | | 1 | | | VGS(th) Gate Threshold Voltage* | ID = 10mA VDS = VGS | 0.5 | | 7 | V | | gfs Forward Transconductance* | VDS = 10V ID = 0.2A | 0.72 | | | S | | GpS Common Source Power Gain | PO = 10W | 1 0 | | | dB | | i1 Drain Efficiency | VDS = 12.5V IDQ = 0.8A | 40 | | | % | | VSWR Load Mismatch Tolerance | f= 1GHz | 201 | | | | | Ciss Input Capacitance | VDS = 0 VGS = -5V f= 1MHz | | | 48 | pF | | Coss Output Capacitance | VDS = 12.5V VGS = 0 f= 1MHz | | | 40 | pF | | Crss Reverse Transfe r Capacitance | VDS = 12.5V VGS = 0 f= 1MHz | | | 4 | pF | | | | | | |
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