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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
STC62WV1024 STC  SOP  05+  88 
    GlitterElectronicscompany
  • Contact:jane xu
  • Tel:86-755-83998873
  • Fax:86-755-83998977
  • Email: sales@glitter-ic.com



STC62WV1024 Datasheet
Discharge into the output of the regulator. The discharge current depends on the value of the capacitor, the output voltage of the regulator, and the rate of decrease of Vin. In the TS317L, this discharge path is through a large junction that is able to sustain a 2A surge with no problem. this is not true of other types of positive regulators. For output capacitors of 25uF or less, the TS317L's ballast resistors and output structure limit the peak current to a low enough level so that there is no need to use a protection diode. The bypass capacitor on the adjustment terminal can discharge through a low current junction. Discharge occurs when either the input or output is shorted. Internal to the TS317L is a 50Q resistor which limits the peak discharge current. No protection is needed for output voltages of 25V or less and 10uF capacitance. Figure 3 shows an TS317L with protection diodes included for use with outputs greater than 25V and high values of output capacitance.
STC62WV1024 Price
This method fails if a user applies OE/RESET during the FPGA configuration process. The FPGA aborts the config- uration and then restarts a new configuration, as intended, but the PROM does not reset its address counter, since it never saw a High level on its OE input. The new configura- tion, therefore, reads the remaining data in the PROM and interprets it as preamble, length count etc. Since the FPGA is the master, it issues the necessary number of CCLK pulses, up t0 16 million (224) and DONE goes High. How- ever, the FPGA configuration will be completely wrong, with potential contentions inside the FPGA and on its output pins. This method must, therefore, never be used when there is any chance of external reset during configuration.
STC62WV1024 on stock
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.INCLUSION OF TI PRODUCTSIN SUCH APPLICATIONSIS UNDERSTOOD TO BE FULLY AT THE CUSTOMER'S RISK.

Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC = lOcc4, IE = 0 50 V
Collector to emitter voltage VCEO Ic = 2niA,IB = o 50 V
ICBO VCB = 50V,IE = 0 O1 DA
Collector cutoff current ICEO VCE = 50V,IB = 0 0.5 DA
Emitter cutoff current IEBO VEB = 6V,Ic = 0 0.01 mA
Forward current transfer ratio hFE VC[: = 10V,Ic = 5mA 160 460
Forward current transfer hFE ratio hFE (smallilarge f ' VC[ = IOV,Ic = 5mA 0 5 0.99
Collector to emitter saturation voltage VCE{sat) IC = lOmA, IB = 0.3mA 0 25 V
Output voltage high level VOH VCC = SV, VB = 0.5V, RL = lkl 4 9 V
Output voltage low level VOL Vcc = SV, VB = 2.5V, RL = lkl 0.2 v
Input resistance Ri -30% 4.7 +30% kl
Transition frequency fT VCB = IOV,IE = -2mA, f= 200MHz 150 MHz