. Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. , Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
STC62WV5128STC Price| CHARACTERISTIC | SYMBOL | RATING | UNIT |
| Repetitive Peak Reverse Voltage | VRRM | 600 | V |
| Average Output Rectified Current | 10 | 10 | A |
| Peak One Cycle Surge Forward Current (Non-Repetitive, Sine Wave) | IFSM | 40 (50 Hz) | A |
| Junction Temperature | Tj | -40150 | C |
| Storage Temperature Range | Tstg | -40150 | oC |
| Screw Torque | | O6 | N*m |
| | | |
STC62WV5128STC on stock| Symbol | 2SB1588 | Unit |
| VCBO | 160 | V |
| VCEO | -150 | v |
| VEBO | -5 | v |
| lc | -10 | A |
| IB | 1 | A |
| Pe | 80(Tc=250C) | W |
| Tj | 150 | oc |
| Tstg | -55 to +150 | oc |
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| VCC3 = 3.3V -VCC25 = 2.5\1 | | | | | |
| _VCCP = 3.3V | | | | | |
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