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STC813LEP(S)A Datasheet

			2SD	1 90
_ - I_ - -_	1000K 10A HULl/LA !oouA 60011A
__	500A
	40011A l l
	300A

	2boI	^
	l IB=U		Pu	se

STC813LEP(S)A Price

It includes a negative supply for PA gate biasing and most of the functions required to implement power control so that only a very few external component are required. The power control section integrates two power MOS devices for control of the PA drain voltages, an MOS driver and a feedback loop amplifier. The MOS driver is supplied from an on-chip voltage tripler.
STC813LEP(S)A on stock

AMBIENT TEMPERATURE		TEMP. COEFF.	KTY83-110				KTY83-120
(IC)	(IF)	(%K)	RESISTANCE (l)			TEMP. ERROR	RESISTANCE (l)			TEMP. ERROR
(IC)	(IF)	(%K)	MIN	TYP.	MAX	(K)	MIN	TYP.	MAX	(K)
-55	-67	0.97	485	500	515	+3.08	480	500	520	±4.11
-50	-58	0.96	510	525	540	+2.99	504	525	545	±4.04
-40	-40	0.93	562	577	592	+2.81	556	577	598	+3.88
-30	-22	0.91	617	632	647	+2.62	611	632	654	+3.72
-20	-4	0.88	677	691	706	+2.42	670	691	713	1-3.56
-10	14	0.85	740	754	768	+2.2	732	754	776	+3.37
0	32	0.83	807	820	833	+1.97	798	820	841	+3.18
10	50	0.80	877	889	902	+1.72	868	889	910	~-l.97
20	68	0.78	951	962	973	+1.45	942	962	983	±2.74
25	77	0.76	990	1 000	1 010	+1.31	980	1 000	1 020	+l.6l
30	86	0.75	1 027	1 039	1 050	+1.44	1 017	1 039	1 060	±2.77
40	104	0,73	1 105	1 118	1 132	+1.7	1 093	1 118	1 143	+3.07
50	122	0.71	1 185	1 202	1 219	+1.98	1 173	1 202	1 231	+3.39
60	140	0.69	1 268	1 288	1 309	+2.27	1 255	1 288	1 321	+3.73
70	158	0.67	1 355	1 379	1 402	+2.58	1 341	1 379	1 416	+4.08
80	176	0.65	1 445	1 472	1 500	+2.9	1 430	1 472	1 515	±4.44
90	194	0.63	1 537	1 569	1 601	+3.24	1 522	1 569	1 617	+4.82
100	212	0.61	1 633	1 670	1 707	+3.59	1 617	1 670	1 723	+5.22
110	230	0.60	1 732	1 774	1 816	+3.95	1 714	1 774	1 834	+5.63
120	248	0.58	1 834	1 882	1 929	+4.34	1 815	1 882	1 948	+6.06
125	257	0.57	1 886	1 937	1 987	+4.53	1 867	1 937	2006	+6.28
130	266	0.57	1 939	1 993	2046	+4.73	1 919	1 993	2066	+6.5
140	284	0.55	2047	2107	2167	+5.14	2026	2107	2188	+6.96
150	302	0.54	2158	2225	2292	+5.57	2136	2225	2314	+7.43
160	320	0.52	2272	2346	2420	+6.02	2249	2346	2444	+7.92
170	338	0.51	2389	2471	2553	+6.47	2364	2471	2578	+8.43
175	347	0.51	2449	2535	2621	+6.71	2423	2535	2646	+8.68

Item	Symbol	Condition	mln	typ.	max	Unit
j p·	-VCEO	-Ic=lOOuA, IB=O	150			V
j·	-VEBO	-IE =lO,uA, Ic = O	5			V
]pL	-ICB	-VCB=100V, IE=O			1	A
	hFE:e	-VCE=5V, -Ic=lOmA	65		450
j p.-	VCE( sat)	-Ic=50mA, -IB=5mA			1	V
17a	fT	-VCB =10V, IE =lOmA	150	200		MHz
j p	Cob	-VCB=10V, IE=O, f-lMHz			5	pF
	NV	-VCE=10V, -Ic=lmA, VG = 80dB, Rg =100k fl, Function - FLAT		150	300	mV

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