STC89C58RD-40C Datasheet| Hitachi Code | SPAK | | lJEDEC | | | lEIAJ | | | Weight (reference value) | 0.10 a | | |
STC89C58RD-40C Price| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | | dVD/dt dVcom/dt tgt | Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time | BT138B- VDM = 670/o VDRM(max), .. _i Tj = 125 aC; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 aC; IT[RMS)_= 12 A; ' dicom7dt = 5.4 A/ms; gate open circuit ITM = 16 A; VD = VDRM(m x); IG = 0.1 A; dIG/dt = 5 A/~s | 1 00 | ...F 50 | ...G 200 1 0 | 250 20 2 | | V/ccS V/ccS | | | | | | | | | |
STC89C58RD-40C on stock| ltem | Symbol | Test conditions | Min. | Typ. | Max. | Unit | | Drain-Source Breakdown-Voltage | V (BR)DSS | ID=lmA VGS=OV | 250 | | | V | | Gate Threshhold Voltage | V GS(th) | ID=lmA VDS=VGS | 2,5 | 3,0 | 3,5 | V | | Zero Gate Voltage Drain Current | IDSS | VDS=250V Tcrl=250C | | 10 | 500 | UA | | | VGS=OV Tcrl=1250C | | 012 | 1,0 | mA | | Gate Source Leakage Current | I GSS | VGS=+30V VDS=OV | | 10 | 100 | nA | | Drain Source On-State Resistance | R DScon) | ID=4A VGS=10V | | 0,35 | 0,5 | Q | | Forward Transconductance | g fs | ID=4A VDS=25V | 2,5 | 5 | | S | | Input Capacitance | C iss | VDS=25V | | 750 | 1 130 | pF | | Output Capacitance | C oss | VGS=OV | | 130 | 200 | pF | | Reverse Transfer Capacitance | C rss | f=lMHz | | 30 | 45 | pF | | Turn-On-Time ton (ton=td(on)+tr) | t d(on) | Vcc=150V | | 30 | 45 | ns | | tr | ID=8A | | 30 | 45 | ns | | Turn-Off-Time toff (ton=td(off)+tf) | t d(off) | VGS=10V | | 40 | 60 | ns | | tf | RGS=10 Q | | 10 | 15 | ns | | Avalanche Capability | I AV | L=lOOpH Tcrl=250C | 8 | | | A | | Continous Reverse Drain Current | IDR | Tc=250C | | | 8 | A | | Pulsed Reverse Drain Current | I DRM | Tc=250C | | | 32 | A | | Diode Forward On-Voltage | V SD | IF=2xIDR VGS=OV Tcrl=250C | | 1 | 1,5 | V | | Reverse Recovery Time | t rr | IF=IDR VGS=OV | | 120 | | ns | | Reverse Recovery Charge | Q rr | -dIF/dt=lOONIJs Tcrl=250C | | 0,6 | | UC | | | | | | | |
| Hysteresis at the cold | Tthhis2 | 10 | 20 | 30 | mV | | end (at -5IC or | | equivalent) | | Battery temperature | Tth3 | 33.11 | 34 23 | 35.43 | %See note 3 | | detection, hot-end 1 | (44.5IC) | (43IC) | (41 .5IC) | | (43IC) | | | | | | |
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