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STD12N10 Datasheet

Type Voltage VRRM Current IT(av) Recovery Time trr
R9GO 12 through 32 16 XX
1200V 1600A 25 rJs
through typical
3200V


STD12N10 Price

Items Symbols Test Conditions Min Max U nits
Zero Gate Voltage Collector Current ICES VGE=OV VCE=1200V 3.0 mA
Gate-Emitter Leackage Current IGES VCE=OV VGE=+ 20V 1 5 LLA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V lc=50mA 4.5 7.5 V
_ Collector-Emitter Saturation Voltage VCEfsatl VGE=15V lc=50A 3.3
Input capacitance Cies f=lMHz, VGE=OV, VCE=10V 8000 (typ) pF
D to Vcc=600V 1.2
> Turn-on Time
C toff lc = 50A VGE=+15V 1.5 u,s
Turn-off Time tf RG = 24c) 0.5
1 Diode Forward On-Voltage VF IF=50A VGE=OV 3.0 V
L_ Reverse Recovery Time tr IF=50A; VGE=-10V; 'O'/dt=150 'X/us 350 ns
Zero Gate Voltage Collector Current ICES VGE=OV VCE=1200V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=OV VGE=+ 20V 1 00 nA
Collector-Emitter Saturation Voltage VCEfsatl VGE=15V lc=25A 3.3 V
Turn-on Time to Vcc=600V 1.2
o toff lc = 25A VGE=+15V 1.5 LiS
Turn-off Time tf RG = 51Q 0.5
l Reverse Current IRRM VR=1200V 1.0 mA
L_ Reverse Recovery Time tr 600 ns


STD12N10 on stock
3.3 tkNw"N.tN, "Mit:t'dty 5% --La 2.1 0ritp,it volt~0 rl (r\rrloq} VA - VO + ( S * a ) ' z5 Hlll_t dlr~etdl_ il The rmaa8urement direction is parallel to the mountin! .c,. For detail definition of the sensing direction andi:rtj~;j': c<nnpare offer draWing in appkndix Ili. .'Voitage 2.6 IWtOlh:r= a.cc~loratjon *SO Gn s 1 'i 'l within the dymUtic frequenCy raryle of the r;eliSOr witb sensor. .thout cljirna<ta to the 2. 7 Qwrloaul iit~ty :l :;; i 0 273 101131r -136, --140, -142 800 Gn < 1 mt; ;i 0273 101 148, -iso,-141r -152 *1,200 Gn Slma ';i lkximum amplitude. 20 times without damage ofhe sensor. ;
G1 dB 23.90 8.50 5.83 5.04 4.47 3.12 2.47 1.94 1.87 1.56 1.33 1.18 1.05 1.05 1.08 1.09 1.09 1.12 1.12 1.18 1.36 1.58 1.88 2.25 2.50 2.79 3.00 3.15 3.30 3.62 3.92 4.49 4.78