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STI5500MVB(QFP) D-C00 1 Datasheet

Gate-Emitter Voltage (C-E SHORT) VGES +20 Volts
Collector Current (Tc = 25IC) lc 400 Amperes
Peak Collector Current (Tj " 150YC) ICM 800* Amperes
Emitter Current" (Tc = 251C) JE 400 Amperes
Peak Emitter Current" IEM 800* Amperes
Maximum Collector Dissipation (Tc = 25IC) Pe 2800 Watts
Mounting Torque, M6 Main Terminal 1.962.94 N-m
Mounting Torque, M6 Mounting 1.962.94 Nm
Mounting Torque, M4 Terminal 0.981.47 N-m
Weight 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC l min.) Vis 2500 Vrms
' Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. "Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).s not exceed Tj(max) rating
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = OV 2 0 mA
Gate Leakage Current IGES VGE = VGES, VCE = OV 0 5cA
Gate-Emitter Th reshold Voltage VG E(th) lc = 40mA, VCE = 10V 4 5 6 0 7 5 Volts
Collector-Emitter Saturation Voltage VCE(sat) lc = 400A, VGE = 15V 2 5 3.4"Volts
lc = 400A, VGE = 15V, Tj = 150YC 2.25 Volts
Total Gate Charge QG Vcc = 600V, lc = 400A, VGE = 15V 2000 nC
Emitter-Collector Voltage VEC IE = 400A, VGE = OV 3 4 Volts


STI5500MVB(QFP) D-C00 1 Price
Output Voltage Phase Reversal The SSM2275/SSM2475 was designed to have a wide common- mode range and is immune to output voltage phase reversal with an input voltage within the supply voltages of the device. How- ever, if either of the device's inputs exceeds 0.6 V above the posi- tive voltage supply, the output could exhibit phase reversal. This is due to the input transistor's B-C junction becoming for- ward biased, causing the polarity of the input terminals of the device to switch.
STI5500MVB(QFP) D-C00 1 on stock

MAX
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- MIN Limit - .
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PULSE DURATION = 80as VGS = 20V VGS= 8V
DUTY CYCLE " 2% Tr = 25aC r
l
VGS= 10V VGS=j ry
VGS= 6V
VGS={ IV
jj VGS= 4V