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STI5580ACV Datasheet

Symbol Parameter Test Conditions Min Max Units
IRRM/IRRM Peak reverse and off-state current At VRRMNDRM, Tcase = 1250C 500 mA
d\Udt Max. linear rate of rise of off-state voltage T0 67% VDRM. T, = 1250C 1000 V/cS
dl/dt Rate of rise of on-state current From 67% VDRM t0 1100A Repetitive 50Hz 250 A/ccs
Gate source lA, tr = 0.5 s. T, = 1250C Non-repetitive 500 A/c(s
VT(TO, Threshold voltage At T=125C 0.77 V
rT On-state slope resistance At T=125C 0.05 ml
tgd Delay time VD = 67% VDRM, gate source 20V, iol tr = 0.5 s, Tj = 250C 1.0 1.5 S
IL Latching current T, = 250C. VD = 5V 150 750 mA
IH Holding current T, = 250C. VG-K = 40 200 mA


STI5580ACV Price

tem SvmboJ Value Unit
3 p VCBO 30±5 v
j p· VCEO 30±5 V
-- VEBO 5 V
^=pjjb;fL lCP 8 A
j pj Jc 4 A
PD 15 W
T] 150
T - 55+150


STI5580ACV on stock
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as criticalcomp onents in life support devicesor systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics

C1arad te ris tic Sy_ol Con ciitions llin Typ iia IinitS
Collo ctor- Cuto ff Currcnt: . TI CJO VCB=50V' IE-O l pA
Emitter-Cutoff Currcnt: 1BO VIB =6Vt IC=O 2 pA
Colle ctor- toBasc! Vol4,:age : VCBO ic=ioo}fi: . 1 0 0 V
C:c) i.lec Lor-- to0initt- 0r Sustainlng ol ta c : vc:c O(su IC=1()E 60 V
C:ollec tor" tO-Lmitt- cr Saturation Vol tO OL_! : X r VCL(s a 0.3 0.8 V
Basc-to-Lmi.tter Sa- turation Voltage: VBL(s at) IC=21\, IB=0.4A 1.0 1.4 V
DC ForWard-Current iil,E1 VCE-2V,IC-100r 2 7 1 0 0 2 6 4
Transfer Ratio: nFE2 VCL=2V, IC-2A 6 0
Output Capacitance: Cob VCi3-10V, IL=O f=1LI2 4 S 6 0 pF
00llector-to-Basc l-'iizic2 Con s tant : Cc' rbb' VC13-10V,IE= . f=31 . 9} Z p0
rransition Frequc: ncy : fT VCB=10V,IF,=-10 0rv\ 7 0 1 4 0 MH Z
Powe r70ut~ggtC:ircu_ e j po Pi=0 * 4h,VrC _2V f=2 7:XIz L 4 6 W
powe r Gain P*G l q 6 1-0 d3