STK10C68-5SF45 Datasheet| 'ULSE | | | A | B C | SINGLE F | | mounted on board Jxl30 sq.mils 'ea = 2.000 sq.mils | | | | | Pd = 2 Watt, die size = 121 dissipating ai | | | A = 3; B = 3f c = 1( IIIIIIII | I I i pm thick, no heat s i pm thick 4x4 sq.cn )5 pm thick 4x4 sq.c I I I IIIII | nk on board Cu area n on board Cu are, IIIIIIII | a | 001 0.01 0.1 1 10 100 1,000 | | | | | | |
STK10C68-5SF45 Price| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | | 9fs ID(SC) | Forward transconductance Drain currentl | VDS = 10 V; IDM = 25 A tp " 300 ~s; 8 " 0.01 VDS = 13 V; Vis = 5 V | 1 7 | 28 60 | | S A | | | | | | | |
STK10C68-5SF45 on stock Infineon Technologies AG . Fiber Optics ' Wernerwerkdamm 16 . Berlin D-13623, Germany Infineon Technologies, Inc. * Fiber Optics . 19000 Homestead Road . Cupertino, CA 95014 USA Siemens K.K. . Fiber Optics . Takanawa Park Tower ' 20-14, Higashi-Gotanda, 3-chome, Shinagawa-ku * Toky0 141, Japan | SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | | V(BR)DSS | drain-source breakdown voltage | VGS = 0; ID = 2.1 mA | 65 | | | V | | VGSth | gate-source threshold voltage | VDS = 10 V; ID = 210 mA | 1.5 | | 3.5 | V | | IDSS | drain-source leakage current | VGS = 0; VDS = 26 V | | | 15 | | | IDSX | on-state drain current | VGS =VGSth + 9 V; VDS = 10 V | 27 | | | A | | IGSS | gate leakage current | VGS = +15 V; VDS = 0 | | | 38 | nA | | 9fs | forward transconductance | VDS = 10 V; ID = 7.5 A | | 6.0 | | S | | RDSon | drain-source on-state resistance | VGS = VGStri + 9 V; ID = 7.5 A | | 0.11 | | I | | Crss | feedback capacitance | VGS = 0; VDS = 26 V; f= 1 MHz; note 1 | | 5,1 | | pF | | | | | | | |
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