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STK17TA8-W25 Datasheet

Extended Type Number	Package	Remarks
U2741B-NFB	SS016	Tube, optimized power-supply rejection, value of C4 differs from M-version, enhanced XTO stability
U2741B-NFBG3	SS016	Taped and reeled, see above

STK17TA8-W25 Price

ABSOLUTE MAXIMUM RATINGS Operating Free-Air Temperature Range ........... ................-55aC to +100aC Lead Solder Temperature (1/16" [1.6mm] below seating plane for 10s)..... .... 2600C Reverse Voltage at 25aC Free-Air Temperature Peak Forward Current at (or below) 700C Free-Air Temperature (derate linearly t0 1000C at the rate of 6.7mNoC) Average Forward Current at (or below) 700C Free-Air Temperature (derate linearly t0 1000C at the rate of lmNoC for each segment or 8mA/oC for total device) Each Segment or Decimal Point ................ .....30mA
STK17TA8-W25 on stock

IC address		Sub address		MSB Data bits LSB
IC Add7}O		Add7Add0		Bit 7	Bit 6	Bit 5	Bit 4	Bit 3	Bit 2	Bit 1	Bit 0
1011	1010	0001	0000	1	Red bias
					(b6)	(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			0001	1	Green bias
					(b6)	(b5)	(b4) (b3)		(b2)	(bl)	(b0)
			0010	1	Blue bias
					(b6)	(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			0011	1		Red drive
						(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			0100	1		Green drive
						(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			0101	1		Blue drive
						(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			0110	1	Blue sub bias		Red sub bias		Green sub bias		Y/C
					(bl)	(b0)	(bl)	(b0)	(bl)	(b0)	switch
			0111	1		Brightness control
						(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			1000	1		Pix control
						(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			1001	1		Coring	Peaking control
						switch	(b4)	(b3)	(b2)	(bl)	(b0)
			1010	1		FO select		Chroma	Auto	Chrom	Over
						(bl)	(b0)	BPF	flesh	bypass	load
			1011	1	Tint control
					(b6)	(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			1100	1	Color control
					(b6)	(b5)	(b4)	(b3)	(b2)	(bl)	(b0)
			1101	1		ABL	Mid Stp	EMG	Bright ABL threshold
						defeat	defeat	defeat	(b2)	(bl)	(b0)
			1110	1	Test register 1				Test register 2
					(b3)	(b2)	(bl)	(b0)	(b2)	(bl)	(b0)
			1111	1	Test regster 3				Black Stretch	Blanking	Reserved
					(b3)	(b2)	(bl)	(b0)	defeat	defeat

ty of oxide defects in the region. Finally, the peak electric field during erasure is approximately 2 MV/ cm lower than EEPROM. The lower electric field greatly reduces oxide stress and the probability of failure-increasing time to wearout by a factor of 100.000.000.

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