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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
STK3041A	SANYO				1000	Theurgy Electronics (Hong Kong.. Contact:xie Tel:86-755-82883265 Fax: Email: hxyms@theu-int.com

STK3041A Datasheet

	l l ilc.J	n	1 L
	l		1 L		1 00p,s Ims
			1	1~ LI, 1	10r	n

D.C. OPERAT			ON

STK3041A Price

VIN (Pin 2): This is the collector ofthe on-chip power NPN switch. This pin powers the internal circuitry and internal regulator. At NPN switch on and off, high dl/dtedges occur through this pin. Keepthe external bypass and catch diode close to this pin. Trace inductance in this path will create a voltage spike at switch off, adding to the VCE voltage across the internal NPN.
STK3041A on stock

PARAMETER	SYMBOL	CONDITIONS			MIN TYP MAX	UNITS
Input Voltage (Note 2)	VIN				2 5 6 5	V
				MAX887 T	3.05 3.15 3.25	V
Output Voltage	VOUT	OmA " IOUT " 50mA,		MAX887 S	2.75 2.84 2.93
Output Voltage	VOUT	SET = GND		MAX887 R	2.70 2.80 2.88
Adjustable Output Voltage Range (Note 3)	VOUT				VSET 6 5	V
Maximum Output Current					120	mA
Current Limit (Note 4)	ILIM				280	mA
				IOUT= OmA	73 150
Ground Pin Current	lQ	SET= GND		IOUT= 50mA	82	UA
		IOUT= 1mA			1.1
Dropout Voltage (Note 5)		IOUT= 50mA			55 120	mV
Line Reg ulation	CVLNR	VIN = 2.5V t0 6.5V, SET tied to OUT, IOUT = 1mA			-0.15 0 0.15	%V
				SET= GND	O011 0.030
Load Regulation	CVLDR	IOUT = OmA t0 50mA		SET tied to OUT	O006	%/mA
				COUT= 1pF	350
Output Voltage Noise		10Hz t0 1MHz		COUT= 100}JF	220	LiVRMS
SHUTDOWN
	VIH				2 0	V
SHDN Input Threshold	VIL				0 4	V
			TA= +25C		0 100
SHD Input Bias Current	iSHDN	VSHD=VIN	TA= TMAX		0 05	nA
			TA= +25C		0.0001 1
Shutdown Supply Current	IQSHDN	VOUT= OV	TA= TMAX		0 02	UA
Shutdown Discharge Resistance (MAX8874)					300	I

Collector to base breakdown	Vo	15		V	le = 10 yA, IE = 0
voltage	Vo	15		V	le = 10 yA, IE = 0
Collector cutoff current	lCB		0.1	ltA	VCB = 15 V, IE = 0
Collector cutoff current	lCE		0.1	ltA	VCE = 6.0 V, RBE = Infinite
Emitter cutoff current	IEB		0.1	ltA	VEB = 1.5 V, lC = 0
DC current transfer ratio	hFE	90	1 10 140		VCE =1 V, lC = 5 mA
Reverse transfer capacitance	C		0.5	pF	VCE = 1 V, Emitter ground, f=l MHz
Collector output capacitance	Cb		0.85 1.15	pF	VCB =1 V, IE = 0, f = 1 MHz
Gain bandwidth product	f(1)	1.0	4O	GHz	VCE =1 V, lC = 5 mA
Gain bandwidth product	f(2)		9O	GHz	VCE =1 V, lC = 30 mA
Power gain	PG	10	13	dB	VCE =1 V, lC = 5 mA, f= 900 MHz
Noise figure	NF		1.1 1.8	dB	VCE =1 V, lC = 5 mA, f= 900 MHz

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