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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SIS301BO     08+/09+  全新原装,欢迎订购!  11 
    SHENG ZHOU HE ELECTRONICS CO.,..
  • Contact:zhou
  • Tel:86-755-83397505.82883120
  • Fax:86-0755-88296852
  • Email: 1018686693@qq.com


SIS301BO   QFP  02  Original  11 
    Minchin WaiYip Development Co...
  • Contact:Edison Chan
  • Tel:86-755-61667059
  • Fax:86-755-61303859
  • Email: mingqindianzi@live.cn
SIS301BO     02+    11 
    Anichip International Ltd.
  • Contact:Andrew
  • Tel:86-755-25873776
  • Fax:86-755-25873736
  • Email: andrew@anichip.com
SIS301BO 11       
SIS301BO   02  11     
    AconElectronicslimited
  • Contact:Ms.LaneyaTao
  • Tel:86-755-82518965/82518105
  • Fax:86-755-82516176
  • Email: laneyatao@gmail.com

SiS301BO Datasheet
Notes: 1 Measured at 2.5V vicfeo line bias 2 Value specified at 750 nm 3 Fiber optic faceplate will modify sensitivity as shown in Figure 5 4 +% PRNU is defined as [<Vmax - Vavg)Navg] x 100% and -% PRNU is defined as (Vavg - Vmin)Navg] x 100%, where Vmax is the output of the pixel closest to saturation level, Vmin is the output of the pixel closest to dark level, Vavg is the numerical average of all the array pixels. The first and last pixels are not counted in this measurement. 5 Measured at an exposurelevel of ESAT/2 6 Maximum dark current <1.5 x average dark current 7 From 250 . 1000 nm, sensitivity is typically at least 20% of its paak value.
SiS301BO Price

Pr-Radlatlon ElectrlcaISpeclficatlons TC -+250c.Unless Othervdss Spedfbd
LWrTS
PARArdETER SYVBOL TEST CONEXTIONS M MAX UNITS
DnSourco Broakdown VoRs BVDSS VGS - O,ID tlmA 500 V
Gate-rhreshold .Wts VGS(th) VDS = VGS,ID.lmA 2O JI0 V
GaOe-Body Loakafle Forward IGSSF VGSl +20V 100 nA
Gate-Body LoakaOe Rewrsa IGSSR VGS - -20V 100 nA
Zero-Gate Voe DraIn Current IDSS1 IDSS2 IDSS3 VDS = 500V, VGS = o VDS = 400V, VGS = o VDS = 400V, VGS = O, TC = +1250C 1 0.025 025 mA
Rated Avalanche CurreN IAR Tlme - 20ys 9 ^
Drain-Sourcs On-State Votts VDS(on) VGS - 10V,ID = 3A 7.94 V
DraINSource On Resistance RDS(on) VGS = 10V,ID = 2A 2.52 Q
Tum-On Delay T,rra td(on) VDD -250V,ID - 3A 34
Risa Tima Pulsa W:dth = 3{rs
Tum-Off Delay Tme td(off) Pod = 300ps, R = 2sri 224 ns
Fal Tima tf O s VGS s 10 (See Test Circurl)
Gate-Charge Threshold OG(th) O5 3
Gats-Charge On Slate C)G(on) 17 68 nc
Gate-Chare Total QGM VDD - 25(N, ID = 3A 32 128
Plateau VoFtage VGP IGSl = IGS2 OsVGSs20 3 12 V
Gate-ChgSourca QGS 2 8 nc
Gata-Charge Drain QGD 10 40
Diode Forward Voltae VSD ID3A, VGD=O 0.6 1.8 V
Reverse Recovery Time -rr I= 3A; dVdt= 100Nps TBD ns
Juncbon-To-Case Rep 2.5 oc/w
Jurctlon-To-Ambient Reja Free Air Operaoon 60
I IL_ .'C?N.E'T ' FIGURE l. SWITCHING TIME TESTING FIGURE Z Ct.AMPED rNOUCTJVE SWJTCHING


SiS301BO on stock
Notes: * Post-radiation performance guaranteed at 250C per MIL-STD-883. 1. Under steady state (non-transient) conditions, IOL must be limited extemally as follows: Maximum IOL per port pin: lOmA Maximum IOL per 8-bit port- Port 0: 26mA Ports l, 2, & 3: 15mA Maximum total IOL for all output pins: 71mA IfIOL exceeds the test condition, VOL may exceed the related specification. Pins are not guaranteed to sink current greater than the listed test conditions. 2. Capacitive loading on ports o and 2 may cause spurious noise pulses to be superimposed on the VOL of ALE and ports I and 3. The noise is due to external bus capacitance discharging into the port o and port 2 pins when these pins make l to O transitions during bus operations. In applications where capacitance loading exceeds 100 pF, the noise pulse on the ALE may exceed 0.8V. In these cases, it may be desirable to qualify ALE with a schmitt trigger or use an address latch with a schmitt trigger strobe input. 3. Capacitive loading ports O and 2 cause the VOH on ALE and PSEN to drop below the VDD-0.3 specification when the address lines are stabilizing. 4. Capacitance measured for initial qualification or design changes which may affect the value.

1 ^
lc =7.C IA -
h FE =4.6 V"trybock= 050v
-'=15625 Hz 'on =40~sec off -24Wc I flyback- i ijUa . RU_amb- 12 0C/W TamC-25 0C