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Detailed Description Temperature Dependence of Current Limiting and Switching Speed Performance The RLD03N06CLE, CLESM and RLP03N06CLE are monolithic power devices which incorporate a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain source current flow. The current sensing scheme supplies current to a resistor that is connected across the base to emitter of a bipolar transistor in the control section. The collector of this bipolar transistor is connected to the gate of the power MOSFET transistor. When the ratiometric current from the current sensing reaches the value required to forvvard bias the base emitterjunction of this bipolar transistor, the bipolar "turns on". A resistor is incorporated in series with the gate of the power MOSFET transistor allowing the bipolar transistor to adjust the drive on the gate of the power MOSFET transistor to a voltage which then maintains a constant current in the power MOSFET transistor. Since both the ratiometric current sensing scheme and the base emitter unction