TLC5628IDWR Price 12. VREG stabilization The VREG pin (5 V regulator output) that is a power supply for control circuit must be provided with a stabilizing capacitor (about 0.1 yF). GND of a capacitor to be connected must be connected to the GNDl pin with the shortest possible wiring. TLC5628IDWR on stock| Parameter Collector-base breakdown voltaqe Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer I2SC4818H.2SC4818.2SC4098.2SC2413K ratio I2SC2058S Transition frequency Output capacitance | Symbol BVCB BVCE BVEB ICB IEB VCE(sa) hFE fT Cob | Min 4 25 5 56 82 15 | Typ 01 300 1 3 | Max 05 05 03 27 18 | Unit v v v v MHz pF | Conditions lc:50UA lc:imA IE:50UA VCB:24V VEB:3V lc/IB:i OmA/i mA VCE:6V, lc:imA VCE:6V, IE:-ImA, f:iOOMHz VCB:6V, IE:OA,f:iMHz | | | | | | | |
| Symbol | Conditions | 2SB1624 | Unit | | ICBO | VCB=-110V | 100max | | | IEBO | VEB=-5V | -100max | A | | V(BR)CEO | lc=-30mA | 110min | v | | hFE | VCE=-4V, lc=-5A | 5000min* | | | VCE(sat) | lc=-5A, IB=-5mA | -2.5max | v | | VBE(sat) | lc=-5A, IB=-5rriA | -3.Omax | v | | fT | VCE=-12V, IE=0.5A | 100typ | MHz | | COB | VCB=-10V, f=lMHz | 11 0typ | pF | | | | |
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
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