suppliers of TLV2322IDRG4 and PDF data of TLV2322IDRG4

PAGE ERASE: The optional Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program without Built-In Erase command to be utilized at a later time. To perform a Page Erase, an opcode of 81H must be loaded into the device, followed by six reserved bits, nine address bits (PA8-PAO), and nine don't care bits. The nine address bits are used to specify which page of the memory array is to be erased. When a low to high transition occurs on the CS pin, the part will erase the selected page t0 1s. The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the status register will indicate that the part is busy.