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TMS-SCE-1-2.0-9 Datasheet

DESCRIPTION This device is a monolithic quad Intelligent Power Switch in Multipower BCD Technology, for driving inductive, capacitive or resistive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indis- tructible and suitable for general purpose indus- trial applications.
TMS-SCE-1-2.0-9 Price

As shunt voLtage-regulator tube-See Accomtanyzng Circur,t Unrequlated Supply: DC voltage. . . 36000 volts Equivalent resistance . . . . 11 megohms Vol tage-Divider Val ues: Ri (5 watts). . . . . 220 meqoHms R2 (2 watts). . . . . 1 megoHm R~ (1/2 watt) . . . . 0.82 megoHm F?ef4rence-Vol tage Suo.ply:
TMS-SCE-1-2.0-9 on stock

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2A - 3A -

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CBO	collector-base breakdown voltage	lc = 0.1 rriA; IE = 0	100			V
V(BR)CER	collector-emitter breakdown voltage	lc = 1 rriA; RBE = 100	95			V
V(BR)EBO	emitter-base breakdown voltage	lc = 0; IE = 0.1 mA	3			V
ICES	collector-emitter leakage current	VCE = 50 V; VBE = 0			100	o
hFE	DC current gain	lc = 25 mA; VCE = 10 V; see Fig.4	20
fT	transition frequency	lc = 25 mA; VCE = 10 V; f = 500 MHz; see Fig.5		1		GHz
Cre	feedback capacitance	IC=O;VCB=lOV;f=lMHz; see Fig.6		1.7		pF

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