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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TMS320C6211GJC167     3500    Texas Instruments 
    Jetli Electronic HK Limited
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TMS320C6211GJC167 Datasheet
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TMS320C6211GJC167 Price

SEMICONDUCTOR F 7 : 0 r TOSHIBA TRANSISTOR 2SC553
TECHNICAL DATA SILIOON NPN EPITAXIAL PLANAR


TMS320C6211GJC167 on stock

Rating Specification Conditions
Contact resistance Center: 30 m ohms Outside: 30 m ohms 100 mA max.
Insulation resistance 100 M ohms min. 500V DC
Withstanding voltage No flashover or insulation breakdown 650 V AC/one minute
VSWR 1.3 max. 1.5 max. DC t0 3 GHz 3 t0 6 GHz


Unless noted otherwise, all parameters use a GRP load of 4 GLBs, 20 PTXOR path, ORP and YO clock Refer to Timing Model in this data sheet for further details. Standard 16-Bit loadable counter using GRP feedback. fmax (Toggle) may be less than l/(twh + twl). This is to allow for a clock duty cycle of other than 50%. Reference Switching Test Conditions Section.