TMS320C6712BGFNC13-2CZBHB3 Datasheet| Parameter | Symbol | Conditions | mi¨n | typ | max | Unit | | | ICBO | VCB = -10V,IE = 0 | | | - 0.1 | | | Collector cutoff current | ICEO | VCE = -20V, IB = 0 | | | -100 | | | Emitter cutoff current | IEBO | VEB = -5V,IC = 0 | | | -10 | | | Forward current transfer ratio | hFE* | VCE= -10V,Ic-lmA | 70 | | 220 | | | Collector to emitter saturation voltage | VCE(sat) | IC-lOmAIB-lmA | | - 0.1 | | v | | Base to emitter voltage | VBE | VCE-10V, IC-lmA | | - 0.7 | | v | | Transition frequency | fT | VCB = -10V,IE = ImA, f= 200MHz | 150 | 300 | | MHz | | Noise figure | NF | VCB-10V,IEImAf= SMHz | | 2.8 | 4.0 | dB | | Reverse transfer impedance | Zrb | VCB-10V,IEImAf= 2MHz | | 22 | 50 | | | Common emitter reverse transfer capacitanse | Cre | VCE = -10V,IC = -lmA, f= 10.7MHz | | 1.2 | 2.0 | pF | | | | | | | |
TMS320C6712BGFNC13-2CZBHB3 on stock PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. | Symbol | Parameter | Value | Unit | | VCES | Collector-Emitter Voltage (VBE = 0) | 1500 | V | | VCEO | Collector-Emitter Voltage (lB = 0) | 700 | V | | VEBO | Emitter-Base Voltage (lc = 0) | 10 | V | | lc | Collector Current | 8 | A | | ICM | Collector Peak Current (tp < 5 ms) | 15 | A | | | | TO -3 | TO218 | ISOWATT218 | | | Ptot | Total Dissipation at Te = 25 0C | 150 | 125 | 50 | W | | Tstg | Storage Temperature | -65 t0 150 | -65 t0 150 | -65 t0 150 | oC | | Ti | Max. Operating Junction Temperature | 150 | 1 50 | 150 | oC | | | | | | |
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