TMS320F206P，there are the best TMS320F206P suppiers all over the world here.These are the list and detailed contact method of TMS320F206P suppliers all over the world as follows.You can buy or get informations of TMS320F206P through email , message or tel.

suppliers of TMS320F206P and PDF data of TMS320F206P

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TMS320F206P			TI		QFP	Jetli Electronic HK Limited Contact:Jetchan Tel:86-754-84445458 Fax:86-754-84445458 Email: jetli@jetlielec.com
TMS320F206P						Shenzhen Goodchip Electronic C.. Contact:Selina Tel:86-137-25593155 Fax: Email: good-chip@hotmail.com
TMS320F206P	25		TI			Coten Electronic (HK) Limited Contact:CarolChan Tel:86-755-83740377 Fax:86-755-8252-1899 Email: cotenelec@gmail.com
TMS320F206P						Hongkong By-Joy Elec Co.,Ltd Contact:Lucy Tel:86-755-83633625 Fax:86-755-83001775 Email: hkbyjoy@yahoo.com.cn
TMS320F206P					8	aric electronics tech Contact:yao Tel:86-755-33972496 Fax: Email: aura@aric-ic.com

TMS320F206P Datasheet

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CHARACTERISTICS	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX.	UNIT
Zero Gate Voltage Drain Current	IDSS	VDS = 60 V, VGs = 0 V			10
Gate Leakage Current	IGSS	VGS = +10 V, VDS = O V			+10
Gate Cut-off Voltage	VGS(off)	VDS = 10 V, lo = 1 mA	1.5	2 0	2 5	v
'ii Note Forward Transfer Admittance	l yfs I	VDS = 10 V, ID = 30 A	18	36		S
Drain to Source On-state Resistance Note	ROScon}l	VGs = 10 V, lo = 30 A		10 3	13	mQ
Drain to Source On-state Resistance Note	RDScon}2	VGs = 4.5 V, lo = 30 A		12 1	16.5	mQ
Input Capacitance	Ciss	VDS = 10 V		1950		pF
Output Capacitance	Coss	VGs = 0 V		380		pF
Reverse Transfer Capacitance	Crss	f=l MHz		150		pF
Turn-on Delay Time	td(on)	VDD = 30 V, lo = 30 A		12		ns
Rise Time	tr	VGs = 10 V		6		ns
Turn-off Delay Time	td(off)	Re = 0Q		48		ns
Fall Time	tf	Re = 0Q		5 0		ns
Total Gate Charge	QG	VDD = 48 V		40		nC
Gate to Source Charge	QGS	VGs = 10 V		7 5		nC
Gate to Drain Charge	QGD	lo = 60 A		10 0		nC
Body Diode Forward Voltage Note	VF(S-O)	IF = 60 A, VGs = 0 V		0 96	1 5	v
Reverse Recovery Time	t	IF = 60 A, VGs = o V		32		ns
Reverse Recovery Charge	Qrr	di/dt = 100 AlctiS		45		nC

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