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TMS320LC541PZ-HOUSE Datasheet
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TMS320LC541PZ-HOUSE Price
100% pin-for-pin compatible with TexasInstruments TMS 320C50. This device is structuredusing static CMOSintegrated circuit technology. The combination of separate buses for program memory and data memory, additional on-chip peripherals,more on-chip memory, and a highly specializedinstruction setis the basis ofthe operational flexibility and speed ofthis device. The 320C50RP is designed to execute more than 28 millioninstructions per second. It also has new static design techniques for minimizing power consumption and maximizing radiation hardness. Many other key features are available for this device. Tw~ indirectly addressed circular buffers are used for circular addressing. Sixteen software-programmable wait-state generators forprogram, data, andIU O memory spaces. Capable of surviving space environments, the 320C50RP is ideal for satellite, spacecraft, and space probe missions. RAD-PAK~ technology incor- porates radiation shielding in the microcircuitpackage. It eliminates box shielding while providinglifetimein orbit. 'Ihe 320C50RPis availablein Class S p.ackaging and screening.
TMS320LC541PZ-HOUSE on stock

AO-A15 Address Inputs
DQO-DQ7 Data Inputs/Outputs, Command Inputs
DQ8-DQ15 Data Inputs/Outputs
E Chip Enable
Output Enable
Write Enable
ALE Address Latch Enable
Vcc Supply Voltage
Vss Ground
NC Not Connected Internally


Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient VGS(th) 1 0 1 8 5 0 2.0 Vdc -m V/YC
Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 5.0 Adc, Tj @ 25IC) (VGS = 10 Vdc, ID = 5.0 Adc, Tj @ 150YC) RDS(on) 23 43 29 55 mQ
Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 5.0 Adc, Tj @ 25IC) (VGS = 5.0 Vdc, ID = 5.0 Adc, Tj @ 150YC) RDS(on) 28 50 34 60 mQ
Source-Drain Forward On Voltage (ls = 5 A, VGS = 0 V) VSD O80 1.1 V