TMS320UC5402PGE Datasheet| DIMENSIONS | | | INCHES | MILLIMETERS | | SYMBOL | MIN | MAX | MIN | MAX | | A | 0.003 | 0 007 | 0 08 | 0 18 | | B | 0.006 | | 0 15 | | | C | | 0 005 | | 0 13 | | D | 0 035 | 0 043 | 0 89 | 1 09 | | E | 0 110 | 0 120 | 2 80 | 3 05 | | | 0 075 | 1 90 | | G | 0 037 | 0 95 | | H | 0 047 | 0 055 | 1 19 | 1 40 | | l | 0 083 | 0 098 | 2 10 | 2 49 | | J | 0 014 | 0 020 | 0 35 | 0 50 | | | | | |
TMS320UC5402PGE Price deselected Chip Enable l (CEi) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (l/00 through l/Ois) are placed in a high-impedance state when: deselected Chip Enable l (CEi) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable l (CEi) LOW and Chip Enable 2 (CE2) HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable 1 (CEi) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from l/0 pins (l/00 through l/07), is written into the location specified on the address pins (Ao through A18). If Byte High Enable (BHE) is LOW, then data from l/0 pins (l/08 through l/015) is written into the location specified on the address pins (Ao through A18). TMS320UC5402PGE on stock| Parameter | Symbol | Conditions | mi¨n | typ | max | Unit | | | ICBO | VCB = -10V,IE = 0 | | | - 0.1 | | | Collector cutoff current | ICEO | VCE = -20V, IB = 0 | | | -100 | | | Emitter cutoff current | IEBO | VEB = -5V,IC = 0 | | | -10 | | | Forward current transfer ratio | hFE* | VCE= -10V,Ic-lmA | 70 | | 220 | | | Transition frequency | fT | VCB-10V,IEImAf= 200MHz | 150 | 300 | | MHz | | Collector to emitter saturation voltage | VCE(sat) | Ic-lOmAIB-lmA | | - 0.1 | | v | | Base to emitter voltage | VBE | VCE= -10V, IC-lmA | | - 0.7 | | v | | Noise figure | NF | VCB-10V,IEImAf= SMHz | | 2.8 | 4.0 | dB | | Reverse transfer impedance | Zrb | VCB-10V,IEImAf= 2MHz | | 22 | 50 | | | Common emitter reverse transfer capacitance | Cre | VCE = -10V,IC = -lmA, f= 10.7MHz | | 1.2 | 2.0 | pF | | | | | | | |
| Parameters | SpeclflcatIon Ilmtt | U, Its | | | +25 | -54 to +85 | oc | | Frequency range | IO - IOOO | MHz | | Small signalgain | 16 3±0S | | dB | | Gain vs. temperature | | | dB Max | | Gain ilatness | I.O | 1O | dB Max p-p | | | 16 | 16 | dB Min | | VSWR Input Output | 1.5:1 1.5:1 | | Max Max | | I dB compression | | | dBm Min | | Outprn intercepr point 3rd Order 2nd Order | +31 | | dBm Min dBm Min | | Noise figure | 4.0 | | dB Max | | DC power @ 15 Vdc r. I% | 1 10 | 120 | mA Max | | Gain vs. Vdc | | | dBNoFt Max | | Housing | T0-8 LP (see page P-13 for details) | | | | |
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