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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TMS3472ADW TIS        772 
TMS3472ADW     N/A    06+ 
    Desheng Technology (HK)Co.,Lim..
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  • Tel:86-755-83957696
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  • Email: deshentec@yahoo.cn



TMS3472ADW Datasheet

Parameter Conditions Symbol Min Typ Max Unit
Forward voltage IF= 200 mADC VF O50 v
Reverse current VR= 30V lR 30 uA
Capacitance between terminals f = 1MHz,and 10 VDCreverse voltage CT 10 pF


TMS3472ADW Price

INPUT (Input mode Vccv = 8V +5%)
FBlow/high Input Low/High Level Threshold 0.4 0.7 0.9 V
IIN Input current 2 10 o:A
OUTPUT (Output mode Vccv = 8V +5%, RLOAD > 1kl )
FBLOW Output Low Level IIN = 1.OmA IIN = 0.2mA 0 0.7 0.3 V V
FBHIGH Output High Level IOUT= 1.OmA 3.6 4 4.4 V
FBDEL Fast blanking to RGB delay At 50% on digital RGB transients, at 2.7VON FB rise transient, at l.5V on FB fall CLOAD = 10pF max 30 ns
FBTRANS Fast Blanking transitions at FB output Rise Time Fall Time CUOAD = 10pF max between 10% and 90% between 90% and 10% 30 30 ns ns


TMS3472ADW on stock

Absolute Maximum Ratings Tc = 250C, Unless Otherwise Specified FSJ9055D, FSJ9055R UNITS Drain to Source Voltage . . . . . . . . VDS -60 V Drain to Gate Voltage (RGS = 20k ( ; - ...... VDGR -60 V Continuous Drain Current Tc=250C ......... ID 55 A Tc=lOOoC ......... ID 35 A Pulsed Drain Current . . . . . . . . . . IDM 165 A Gate to Source Voltage . . . . . . . . VcS +10 V Maximum Power Dissipation Tc=250C PT 125 W Tc=lOOoC PT 50 W Linear Derating Factor . . . . . . . 1.20 W/oC Single Pulsed Avalanche Current, L = 100ffH, (See Test Figure~ . . . . . . . ' lAS 165 A Continuous Source Current (Body Diode~ ......... IS 55 A Pulsed Source Current (Body Diode~ ISM 165 A Operating and Storage Temperature . . . . . . . . . . Tj, TSTG -55 t0 150 0C Lead Temperature (During Soldering)..... TL 300 0C (Distance >0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications Tc = 250C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = OV 60 V
Gate Threshold Voltage VGS(TH) VGS = VDS, Tc= -550C -7.0 V
ID = 1mA Tc= 250C -2.0 -6.0 V
Tc= 1250C -1.0 V
Zero Gate Voltage Drain Current IDSS VDS = -48V, Tc= 250C 25
VGS = OV Tc= 1250C 250
Gate to Source Leakage Current IGSS Vcs= +20V Tc= 250C 100 nA
Tc= 1250C 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 55A -1.75 V
Drain to Source On Resistance rDS(ON)12 ID = 35A, Tc= 250C 0 020 0 029 l
VGS = -12V Tc= 1250C 0 044 l
Turn-On Delay Time Ld(ON) VDD = -30V, ID = 55A, 55 ns
Rise Time tr RL = 0.55l , VGS = -12V, RGS = 2.3sl 90 ns
Turn-Off Delay Time td(OFF) 80 ns
Fall Time tf 35 ns
Total Gate Charge Qg (TOT) VGS = OV to -20V VDD = -30V, 250 nC
Gate Charge at 12V Qg(12) VGS = OV to -12V ID = 55A 130 160 nC
Threshold Gate Charge Qg(TH) VGS = OV to -2V 16 nC
Gate Charge Source Qgs 36 48 nC
Gate Charge Drain Qgd 42 53 nC
Plateau Voltage V(PLATEAU) ID = 55A, VDS = -15V 6 V
Input Capacitance clss VDS = -25V, VGS = OV, 6300 pF
Output Capacitance oOSS f= 1MHz 2250 pF
Reverse Transfer Capacitance bRSS 300 pF
Thermal Resistance Junction to Case ROJC 0 83 oc/w
Thermal Resistance Junction to Ambient ROJA 40 oc/w


Output voltage Vreg 4.75 5.00 5.25 V IL-IOOmA
Output load variation VRL -50 O 10 mV IL-0200mA
Supply voltage variation AWCC -10 0 25 mV (\6c 6~9V) IL-IOOmA