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TMS370C712B Datasheet

Tum-On Time VcC = 125 Vdc; Ic = 3.0 Adc; IB = 0.6 Adc on 0.6 Lis
Tum-0 ff Time Vcc = 125 Vdc; Ic = 3.0 Adc; IBl = 0.6 Adc; IB2 = 1.5 Adc toff 3.0 Lis


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Parameter Symbol Condition Min Typ. Max Unit
Drain-source breakdown voltage BVDSS VGs=OV, ID=50ccA 650 V
VDS=Max. Rating, VGS=OV 50
Zero gate voltage drain current IDSS VDs=0.8Max. Rating, VGs=OV, TC=125IC 200
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A 8 10 l
Forward transconductance (note) gfs VDs=50V, ID=0.5A 0.5 S
Input capacitance Ciss 250
Output capacitance Coss VGS=OV, VDS=25V, f=lMHz 25 pF
Reverse transfer capacitance Crss 10
Turn on delay time td(on) VDD=0.5BVDSS, ID=1.OA 12
Rise time lr (MOSFET switching 4
Turn off delay time td(off) time are essentially independent of 30 nS
Fall time tf operating temperature) 10
Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=1.OA, VDs=0.5BVDSS (MOSFET 21
Gate-source charge Qgs switching time are 3 nC
Gate-drain (Miller) charge Qgd essentially independent of operating temperature) 9


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'NOTE: 1. SAMSUNG can support tRDL=2CLK . 2. Number of valid output data after row precharge : 1, 2 for CAS Latency = 2, 3 respectively. 3. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of other activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same bank is illegal 4. tDAL defined Last data in to Active delay. SAMSUNG can support tDAL=tRDL+ tRP .
Optimum switching of either AC or DC loads is provided by a configurable output. For AC loads, connection A in Figure l must be used. Connection A will also switch DC loads but connection B, in Figure l, provides DC-only operation with the advantages of substantial reduction in on-resistance and twice the output current capability as that obtained with connection A.