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TMS370CxCxFN Datasheet

Pin Name Pin Function
Ao - A2 Page Address Inputs
A3 - A21 Address Inputs
Qo - Q14 Data Outputs
QisIA1 Output 15(Word mode)/ LSB Address(Byte mode)
BHE Word/Byte selection
CE Chip Enable
OE Output Enable
Vcc Power
Vss Ground
N.C No Connection


TMS370CxCxFN Price
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.
TMS370CxCxFN on stock
Because the processor includes an on-chip oscillator circuit, an external crystal may also be used. T he crystal should be con- nected across the CLKIN and XTAL pins, with two capacitors connected as shown in Figure 2. A parallel-resonant, fundamen- tal frequency, microprocessor-grade crystal should be used.

Parameter Symbol Conditions mi¨n typ max Unit
Collector cutoff current ICBO VCB-150VIE0 -50
Emitter cutoff current IEBO VEB = -3V,Ic = 0 -50
hFEl VCE= -5V,IC-20mA 20
Forward current transfer ratio hFE2# VCE-5V,IC-lA 60 200
hFE3 VCE-5V,IC-7A 20
Base to emitter voltage VBE VCE-5V,IC-7A -1.8 v
Collector to emitter saturation voltage VCE(sat) IC-7AIB- 0.7A -2.0 v
Transition frequency fT VCE-5V,IC- 0.5Af= 1MHz 15 MHz
Collector output capacitance Cob VCB-10VIE0f= 1MHz 270 pF