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TMS40L45-45NL Datasheet ELECTRICAL CHARACTERISTICS PER DIODE: (TA=250C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=480V 7.0 IR VR=480V, TA=1500C BVR IR=l.OhtA 600 675 VF IF=lOmA 0.88 VF IF=50mA l.04 VF IF=lOOmA l.16 CT VR=OV, f=l.0 MHz trr IR=IF=lOmA, RL=100Q, Rec. t0 1.OmA TMS40L45-45NL Price Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKY0 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 ltaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy TMS40L45-45NL on stock
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