| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
TMS4256-12FMS Datasheet
TMS4256-12FMS Price Test conditions assume signal transition time of 5 ns or less timing reference levels of l.5V, input pulse levels of O t0 3.OV, and output loading of the specified IOL/IOH and 100-pF load capacitance. At any given temperature and voltage condition, tHZCE iS less than tLZCE, tHZOE iS less than ti_ZOE, and tHZWE iS less than tl_ZWE for any given device. tHZOE, tHZCE, and tHZWE are specifIed with CL = 5 pF as in part (b) ofAC Test Loads. Transition is measured +200 mV from steady-state voltage. The internal write time of the memory is defined by the overlap of CEi LOW, CE2 HIGH, and WE LOW. CEi and WE signals must be LOW and CE2 HIGH to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge ofthe signalthat terminates the write The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum oftHZWE and tSD TMS4256-12FMS on stock
COMMAND IN+, COMMAND IN- , COMMAND GROUND, COMMAND OUT These are the connection pins for the command amplifier. The command amplifier has a differential input that operates from a +4Vdc full-scale analog current command. The command ampli- fier output signal is internally limited to approximately +5Vdc to prevent the amplifier from saturating. The input impedance of the command amplifier is 50KQ. |
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