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TMS44400P Datasheet

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TMS44400P Price

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Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 V VGS = OV, ID = 1.OmA
CBVDSS/CiTj Temperature Coefficient of Breakdown Voltage O125 woc Reference t0 250C, ID = 1.OmA
RDS(on) Static Drain-to-Source On-State 0 7 l VGS = 12V, ID = 1.OA
Resistance 0 6 VGS = 12V, ID = 0.6A
VGS(th) Gate Threshold Voltage 2 0 4O V VDS = VGS, ID = 1.OmA
9fs Forward Transconductance 0.7 s(1) VDS > 15V IDS = 0.6A
IDSS Zero Gate Voltage Drain Current 25 VDS= 80V, VGS= OV
250 VDS = 80V, VGS = OV, Tj =1250C
IGSS Gate-to-Source Leakage Forward 100 nA VGS= 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS= -20V
Qcl Total Gate Charge 11 VGS =12V, ID = 1.OA,
Qqs Gate-to-Source Charge 3.0 nC VDS = 50V
Qgd Gate-to-Drain ('Miller') Charge 4 0
td(on) Turn-On Delay Time 20 VDD = 50V,ID = 1.OA,
tr Rise Time 16 VGS =12V, RG = 7.51
td(off) Turn-Off Delay Time 65 ns
tf Fall Time 45
LS+LD Total Inductance 10 nH vleasured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in from package) with Source wires internally Jonded from Source Pin to Drain Pad
ciss Input Capacitance 300 pF VGS = OV VDS = 25V
Coss Output Capacitance 100 f = 1.OMHz
Crss Reverse Transfer Capacitance 16