TMS55160DGH-70A Datasheet| 2SC4488 | 3-=z1 | J_ | | !t | | | __ | | | | - | _ | | tr/- | 7 | | | | | V | -l L | | | | | Lf | | 1 | ^ | | | r - | <4 | l | | | t | | | I ImA | | | | __ - | | | | | | | | | r | | | | | | | IB | =0 | | | | | | | | | | | | TMS55160DGH-70A Price| | | | -45 | -55 | -70 | -100 | | | PARAMETER | SYM | TEST CONDITIONS | Min | Max | Min | Max | Min | Max | Min | Max | UNIT | | Input Leakage Current | l ILI l | Vcc = Max, VnxT = VSS to Vcc | | 1 | | 1 | | 1 | | 1 | uA | | Output Leakage Current | IiLO l | CE= VIH or OE = Vrri or WE = VIL VIO = VSS to Vcc | | 1 | | 1 | | 1 | | 1 | | | Operating Power Supply Current | ICC | CE = VIL, WE =VIH, OE = VIH , VIN = Vni or VIL, IOUT=OmA | | 3 | | 3 | | 3 | | 3 | mA | | Average Operating | ICC1 | Cycle time=lus, 100% duty, Iio=OmA, CE " 0.2V, Vni > Vcc-0.2V or Vn~ " 0.2V | | 5 | | 5 | | 5 | | 5 | mA | | Current | ICC2 | Cycle time=min, 100% duty, Iio=OmA, CE = VIL, Vni= Vrri or VIL | | 45 | | 40 | | 35 | | 25 | mA | | Standby Power Supply Current (TTL Level) | ISB | CE=VIH or LB = UB =VIH other input= VIL or VIH | | 0.3 | | 0.3 | | 0.3 | | 0.3 | mA | | Standby Power Supply Current (CMOS Level) | ISB1 | CE > Vcc-0.2V or LB = UB >Vcc-0.2V, VIN " 0.2V or VIN > Vcc-0.2V | | 40 | | 15 | | 15 | | 15 | uA | | Output Low Voltage | VOL | IOL = 2.lmA | | 0.4 | | 0.4 | | 0.4 | | 0.4 | v | | Output High Voltage | VOH | IOH = -1.0 mA | 2.2 | | 2.2 | | 2.2 | | 2.2 | | v | | | | | | | | | | | | | TMS55160DGH-70A on stock| II l | | | | | | | | -IC MAX. (PULSE IIIII | iD) | | | | | | | l III IC MAX. | | j | On | 18 | | | | | (CO | iNT | INUOUS) | Is X | | -100ms | | | | | l | X 1 l l\ | L | t L 1 l l l l | | | | | | | | L1 | | | | | | | | | | | ll l | l | | | | | | | | | | k1 | || | | | | | | | | | | | l||| | | | | 5 | {Tc | LE NON | REPE | TIT | [VI | C | | li I It tl ll lI ll l n | | | PULSE Te = 250C | | |lj | | | | CURVES MUST BE DERATED | | | | | | LINEARLY WITH INCREASE IN TEMPERATURE | | | iCEO - MAX. | | | | | | | | | | | |
Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD. Agere Systems employs a human-body model (HBM) for ESD-susceptibility testing and protection- design evaluation. ESD voltage thresholds are depen- dent on the critical parameters used to define the model. A standard HBM (resistance = 1.5 k , capaci- tance = 100 pF) is widely used and, therefore, can be used for comparison purposes. The HBM ESD thresh- old established for the 1417G5 and 1417H5 transceiv- ers is +1000 V |