TMS6432B4E6E Datasheet| Parameter | Symbol | Conditions | Values | Unit | | min | typ. | max | | Drain-source breakdown voltage | V(BR)DSS | VGS=OV, /D=0.25mA | 600 | | | V | | Drain-Source avalanche breakdown voltage | V(BR)DS | VGS=OV, /D=3.2A | | 700 | | | Gate threshold voltage | VGS(th) | /D=135htA, VGS=VDS | 3.5 | 4.5 | 5.5 | | Zero gate voltage drain current | /DSS | VDS=600V, VGS=OV, Tj=250C, Tj=1500C | | 0.5 | 1 70 | UA | | Gate-source leakage current | GSS | VGS=20V, VDS=OV | | | 1 00 | nA | | Drain-source on-state resistance | RDS(on) | VGS=10V, /D=2A, Tj=250C Tj=1500C | | 1.26 3.4 | 1.4 | Q | | | | | | | |
TMS6432B4E6E Price| SINGLE OUTPUT DEVICES | 3000R-S28 (30W1 | | PARAMETER CONDITION | MIN TYP ktAX . MIN nP MAX | MINrYPMAX | | Ornput VollaOej Output Cu,wnt V.1 200-335 VDC ~ Efncianq'.7.P_.Max Raied Load Line Reg\dation P-.- Max Rat'dLoad Load FkOulatian.P- 0-30w d BW2 MHz Output RipplemV. | 1111zo -11 2.5^ j-f 10 mV 20 mV 0~10 mV:20 mV 30 65 | +14S1501& 2A 81%B3%0 · Y m#n* f 10 mV 20 rrN 10 mV ZO mf 30 65 | +278,:*280l; i+282 1.07 mA 8 10mV 20 mV =1ITiVZO mV r 1L o- - 30 | | | | |
TMS6432B4E6E on stock| Microsemi Catalog Number | Device Marking | Maximum Recurrent Peak Reverse Voltage | Maximum RMS Voltage | Maximum DC Blocking Voltage | | MURH805CT | MURH805C | 50V | 35V | 50V | | MURH810CT | MURH810CT | 100V | 70V | 100V | | MURH820CT | MURH820CT | 200V | 140V | 200V | | MURH840CT | MURH840CT | 400V | 280V | 400V | | MURH860CT | MURH860CT | 600V | 420V | 600V | | | | | |
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