TMS87CH41U-1R26 Datasheet| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) DSS | Drain-source breakdown voltage | ID = ImA, VGs = OV | 800 | | | v | | V (BR) GSS | Gate-source breakdown voltage | IGS = +100ffA, VDS = OV | ±30 | | | v | | IGSS | Gate-source leakage current | VGS = +25V, VDS = OV | | | ±10 | | | IDSS | Drain-source leakage current | VDS = 800V, VGS = OV | | | 1 | mA | | VGS (th) | Gate-source threshold voltage | ID = 1ffiA, VDS = 10V | 2 | 3 | 4 | v | | rDS (ON) | Drain-source on-state resistance | ID = 3A, VGS = 10V | | 1 26 | 1 64 | | | VDS (ON) | Drain-source on-state voltage | ID = 3A, VGS = 10V | | 3 78 | 4 92 | v | | yfs | Forward transfer admittance | ID = 3A, VDS = 10V | 4 2 | 7.0 | | S | | Ciss | Input capacitance | | | 1380 | | pF | | Coss | Output capacitance | VDS=25V,VGS=Oy f=1MHz | | 140 | | pF | | Crss | Reverse transfer capacitance | | 28 | | pF | | td (on) | Turn-on delay time | | | 25 | | ns | | tr | Rise time | VDD = 200y ID = 3A, VGS = 10V, | | 28 | | ns | | td (off) | Turn-off delay time | RGEN = RGS = sol | | 185 | | ns | | tf | Fall time | | 46 | | ns | | VSD | Source-drain voltage | Is = 3A, VGS = OV | | 1.0 | 1 5 | v | | Rth (ch-c) | rhermal resistance | Channel to case | | | 0 83 | IC/W | | | | | | | |
TMS87CH41U-1R26 Price| vo= 0.2V | | | | l | | | | | | | Tp= -25IC | 25IC | | | | 7 ) | | | | | | 751C | | | ( | r | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
TMS87CH41U-1R26 on stock 1984 300 497 624 6049 50 5688 3860 2512 1536 487 394 7600 95 100 404 594 18 06 50 614 1538 3363 10412 40 82 850 167 143 3302 3930 739 191 1778 226 26 7 20 372 75 120 83 15 489 20 40 37 633 ' 12 2249 536 5418 337 742 476 5 1025 2738 18 88 2050 95 NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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