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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TMS9902ATDL	.		07+	Stock on hand	14	Meicheng Tech (HK) Electron Li.. Contact:Yoyo Tel:86-755-83740517 Fax:86-755-83741004 Email: sales@meicheng-hk.com
TMS9902ATDL					14	B.T.Chips(HONGKONG)Electronics.. Contact:Ms.DannaLee Tel:86-0755-29215002/26001784 Fax:86-0755-26001784 Email: dannabestlee@gmail.com

TMS9902ATDL Datasheet

The program memory (ROM) is mask programmed with the customer application pro- gram during the fabrication of the microcontroller. The ROM is addressed by a 12-bit wide program counter, thus predefining a maximum program bank size of 4 Kbytes. An additional l Kbyte of ROM exists which is reserved for quality control self-test software The lowest user ROM address segment is taken up by a 512-byte zero page which con- tains predefined start addresses for interrupt service routines and special subroutines accessible with single byte instructions (SCALL).
TMS9902ATDL Price

The 2SA1072[23A1072A/2SA1073 are silbon PNP generalpurpose, high power switching transistors fabricated wkh Fujitsu's unIque Ring EmRter Transitor (RET) technology. RET device s are ca nsWcted with multiple emitlers canned ed thraugh diffused ballast rasistors which prowde uniform current density. Ihls structure permits the desig n of high power transistors with exceptionalswitching character- istics and trequency response in high current applicatIons. The 2SA1072/2SA1072N2SA1073 are especially well-suited far high fraquency power amplifiers, audio power amplifiers. switching regulators and DC-DC convertrs. NPN complements, 2SC2522f2SC2522Ar2SC2523, are availabl~a. * Hirgh fT - 60 MHz (typ) * ExceUent safe operating area * Ultra fast switching speed . Improved reverse second-breakdown capability
TMS9902ATDL on stock

Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 23 W Avg., IDO = 1050 mA, fl = 2112.5 MHz, f2 = 2122.5 MHz and fl = 2157.5 MHz, f2 = 2167.5 MHz)	Gps	12.5	13.5		dB
Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDO = 1050 mA, fl = 2112.5 MHz, f2 = 2122.5 MHz and fl = 2157.5 MHz, f2 = 2167.5 MHz)	11	24	26		%
Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 23 W Avg., IDO = 1050 mA, fl = 2112.5 MHz, f2 = 2122.5 MHz and fl = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at fl -10 MHz and f2 +10 MHz referenced to carrier channel power.)	IM3		-37	-35	dBc
Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 23 W Avg., IDO = 1050 mA, fl = 2112.5 MHz, f2 = 2122.5 MHz and fl = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at fl -5 MHz and f2 +5 MHz.)	ACPR		- 40	-38	dBc
Input Return Loss (VDD = 28 Vdc, Pout = 23 W Avg., IDO = 1050 mA, fl = 2112.5 MHz, f2 = 2122.5 MHz and fl = 2157.5 MHz, f2 = 2167.5 MHz)	IRL		-16	-9	dB

Characteristic	Symbol	Min	Max	Unit	Test Condition
Reverse Breakdown Voltage (Note l)	V(BR)R	75		V	IR= 1.OIlA
Forward Voltage (Note l)	VFM		0.715 0.855 1.0 1.25	V	IF = l.OmA IF = lOmA IF = 50mA IF = 150mA
Peak Reverse Current (Note l)	IRM		1.0 50 30 25	uA uA uA nA	VR = 75V VR = 75V, Ti = 1500C VR = 25V, Ti = 1500C VR = 20V
Total Capacitance	CT		2.0	pF	VR = 0, f = 1.OMHz
Reverse Recovery Time	trr		4.0	ns	IF = IR = lOmA, lrr = O.l x IR, RL = 100Q

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