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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TMX320C6211BGHK167			3500		Texas Instruments	Jetli Electronic HK Limited Contact:Jetchan Tel:86-754-84445458 Fax:86-754-84445458 Email: jetli@jetlielec.com

TMX320C6211BGHK167 Datasheet

DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high- performance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).
TMX320C6211BGHK167 Price

PARAMETER		TEST CONDITIONS	MIN TYPt MAX	UNIT
VIK		vcc = 4.5 V, lI = -18 mA	-1.2	V
		vcc = 4.5 V, IOH = -1 mA	2.5 3 4	V
VOH		vcc = 4.75 V, IOH = - 1 mA	2.7	V
VOL		vcc = 4.5 V, IOL = 20 mA	0 3 0.5	V
ll		vcc = 5.5 V, VI = 7 V	O1	mA
IIH		vcc = 5.5 V, VI = 2.7 V	20
l¨_	ENT		- 1.2
l¨_	All others	vcc = 5.5 V, VI = 0.5 V	- 0.6	mA
IOS§		vcc = 5.5 V, VO = 0	-60 -150	mA
ICC		vcc = 5.5 V, See Note 2	38 52	mA

TMX320C6211BGHK167 on stock

lte tbe module case, pins,or internal.comRoltures abovepeak of21 YC. Forrtber reflow of SMD package version doelevateRzremen70TPlug: z;;Sponent temperat(SLTA The case pinstbrozLgb-boleconfigurationsNmust be soldered. For more information see the applicable package outline drawing.

HIGH	LOW
0.5 U.L.	1.5 U.L
0.5 U.L.	2.0 U.L
0.5 U.L.	1.0 U.L
0.5 UL	0.25 U.L
0.5 U.L.	0.25 U.L
10 U.L	5(2 5)U L¨
10 U.L.	5 f2 5)U L¨

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