TMX320C6455ZTZ7 Datasheet The 3B Series of Signal Conditioning I/o Subsystems provide a low-cost, versatile method of transferring analog transducer signals to a data acquisition, monitoring or control system without the inherent noise, non-linearity, drift and extraneous voltages. The modules are designed to directly accept analog signals from Thermocouples, RTD's,AC and DC Strain Gages, Torque Transducers, Frequency Transducers, LVDTs, millivolt or process current signals. The modules amplify,isolate, linearize and convert the transducer output signals to standardized analog inputs for high-level analog I/O subsystems. The 3B Series Subsystem consists of a 10" relay rack with universal mounting backplane and a family of plug-in (up t0 16 per rack) input and output signal conditioning modules. TMX320C6455ZTZ7 Price| | Parameter | Max | Units | | VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V | | lc@Tc= 250C | Continuous Collector Current | 41 | A | | lc @ Tc = 1000C | Continuous Collector Current | 21 | | ICM | Pulsed Collector Current 0 | 82 | | ILM | Clamped Inductive Load Current | 82 | | IF @ Tc = 1000C | Diode Continuous Forward Current | 8.0 | | IFM | Diode Maximum Forward Current | 130 | | VGE | Gate-to-Emitter Voltage | ±20 | V | | PD@Tc= 250C | Maximum Power Dissipation | 160 | | | PD @ Tc = 1000C | Maximum Power Dissipation | 65 | W | | Tj TSTG | Operating Junction and Storage Temperature Range | -55 to+ 150 | oC | | | Soldering Temperature, for 10 seconds | 300 (0.063 in. (1.6mm) from case ) | | | Mounting torque, 6-32 0r M3 screw. | 10 lbf-in (1.1N-m) | | | | | |
TMX320C6455ZTZ7 on stock| Features 40A, 100V, RDS(on) = 0.0851 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma . Meets Pre-Rad Specifications t0 100KRAD(Si) . Defined End Point Specs at 300KRAD(S1) and 1000KRAD(Si) . Performance Permits Limited Use t0 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically . Survives 2E12 Typically If Current Limited to IDM Photo Current . 10.OnA Per-RAD(Si)/sec Typically Neutron . Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable t0 3E14 Neutrons/cm2 Description The Harris Semiconductor Sector has designed a series of SECOND GENERA- TION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V t0 500V, 1A t0 60A, and on resistance as low as 2sml . Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from lE13n/cm2 for 500V product t0 1E14n/cm2 for 100V prod- uct. Dose rate hardness (GAMMA DOT) exists for rates t0 1E9 without current lim- iting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. | Package T0-204AE Symbol D G S | | Absolute Maximum Ratings (TC = +250C) Unless Otherwise Specified FRK9160D, R, H UNITS Drain-Source Voltage. . . . . . . . . . . . . . . . . .VDS -100 V Drain-Gate Voltage (RGS = 20kI ) ' ' ' ' ' ' . . . . . . . VDGR -100 V Continuous Drain Current Pulsed Drain Current . . . . . . . . . . . . . . . . . . IDM 100 A Gate-Source Voltage . . . . . . . . . . . . . . . . . .VGS +20 V Maximum Power Dissipation Derated Above +250C . . . . . . 2.40 W/oC Inductive Current, Clamped, L = 100ffH, (See Test Figure~ . . . . . . . . . ILM 100 A Continuous Source Current (Body Diode~ . . . . . . . . . . .IS 40 A Pulsed Source Current (Body Diode) . ' ' ' . . . . . . . . . ISM 100 A Operating And Storage Temperature. . . . . . . . TJC, TSTG -55 to +150 0C Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . TL 300 0C | | |
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | | Forward voltage | VF | | | 1.0 | V | IF=50mA | | Reverse current | lR | | | 100 | nA | VR=50V | | Capacitance between terminals | CT | | | 0.4 | pF | VR=35V, f=lMHz | | Forward operating resistance | rF | | | 7 | Q | IF=lOmA, f=lOOMHz | | | | | | | |
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