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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TMX320DRI352GTS TI/BB    08+  New  1795 
    SHENZHEN GAOHANG TECHNOLOGY CO..
  • Contact:lin
  • Tel:86-755-82727788
  • Fax:86-755-82727688
  • Email: weifengic@163.com

TMX320DRI352GTS Datasheet
Notes: 8. Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of O to VCC(typ ), and output loading of the specified IOL/IOH and 30-pF load capacitance. 9. At any given temperature and voltage coriditiori, tHZCE iS less thaci tLZCE, tHZBE iS less than tLZBE, tHZOE iS less than tLZOE, and tHZWE iS less than tLZWE for
TMX320DRI352GTS Price

Symbol Parameter Conditions Typical (Note 4) LM4040AIM3 Limits (Note 5) LM4040BIM3 Limits (Note 5) LM4040CIM3 Limits (Note 5) Units ( Limit)
VR Reverse Breakdown Voltage IR= 100cCA 2.500 V
Reverse Breakdown Voltage Tolerance IR= 100cCA +2.5 ±19 +5.0 ±21 ±12 ±29 mV (max) mV (max)
IRMIN Minimum Operating Current 45 60 65 60 65 60 65 A (max) (max)
CVR Average Reverse Breakdown Voltage Temperature Coefficient IR = 10mA IR = 1mA IR = 100cCA 20 15 15 100 100 100 ppm/IC ppm/IC (max) ppm/IC (max)
CVR/CIR Reverse Breakdown Voltage Change with Operating Current Change IRMIN " IR lmA 0.3 0.8 1.0 0.8 1.0 0.8 1.0 mV mV (max) mV (max)
1mAIR 15mA 2.5 0.6 8.0 0.6 8.0 0.6 8.0 mV mV (max) mV (max)
zR Reverse Dynamic Impedance IR = 1mA, f = 120Hz IAC = 0.1 IR 0.3 0.8 0.8 0.9 l l(max)
eN Wideband Noise IR = 100cCA 10Hz " f" 10kHz 35 cd/RMS
R Reverse Breakdown Voltage Long Term Stability t = 1000hrs T = 25IC +O.1IC lra = 100ccA 120 ppm
Symbol Parameter Conditions Typical (Note 4) LM4040DIM3 Limits (Note 5) Units ( Limit)
VR Reverse Breakdown Voltage IR= 100cCA 2.500 V
Reverse Breakdown Voltage Tolerance IR= 100cCA +25 ±49 mV (max) mV (max)
IRMIN Minimum Operating Current 45 65 70 ccA (max) q(max)
R Average Reverse Breakdown Voltage Temperature Coefficient IR = 10mA IR = 1mA IR = 100cCA 20 15 15 150 ppm/lC ppm/IC (max) ppm/IC (max)
q;VR/21R Reverse Breakdown Voltage Change with Operating Current Change IRMIN " IR lmA 0.3 1.0 1.2 mV mV (max) mV (max)
1mAIR 15mA 2.5 8.0 10.0 mV mV (max) mV (max)
zR Reverse Dynamic Impedance IR = 1mA, f = 120Hz IAC = 0.1 IR 0.3 1.1 l l(max)
eN Wideband Noise IR = 100cCA 10Hz " f" 10kHz 35 c~VRMS
R Reverse Breakdown Voltage Long Term Stability t = 1000hrs T = 25IC +O.1IC IR = 100cCA 120 ppm


TMX320DRI352GTS on stock

Collector-Emitter Sustaining Voltage(l) BD905,BD906 ( lc= 50 rriA, lB= O ) BD907,BD908 BD909,BD910 BD911,BD912 VCEO(sus) 45 60 80 100 V
Collector Cutoff Current (VCE= 30 V, In= 0 ) BD905,BD906 (VCE= 30 V,IB= O ) BD907,BD908 (VCE= 40 V, In= O ) BD909,BD910 (VCE= 50 V, lB= 0 ) BD911,BD912 ICEO 1.0 1.0 1.0 1.0 mA
Collector Cutoff Current (VCB= 45 V, IE= O ) BD905,BD906 (VCB= 60 V, IE= 0 ) BD907,BD908 (VCB= 80 V, IE= O ) BD909,BD910 (VCB= 100 V, IE= O ) BD911,BD912 ICBO 0.5 0.5 0.5 0.5 mA
Emitter Cutoff Current (VEB= 5.0 V, lC= O ) IEBO 1.0 mA


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I 5ms/div Load Switch to Charge Pump (1.5X Mode, 4x30mA Load)