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TMX34070NL-66 Datasheet NOTES: PE: The AC Timing Diagram applies to PE=VDD. For PE=GND, the negative edge of FB aligns with the negative edge of REF, divided outputs change on the negative edge of REF, and the positive edges of the divide-by-2 and the divide-by-4 signals align. S kew: The time between the earliest and the latest output transition among all outputs for which the same tu delay has been selected when all are loaded with 20pF and terminated with 750! to VDDa/2. TMX34070NL-66 Price
TMX34070NL-66 on stock These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficientinher- ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. I SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. |
