| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| TN0200-T1 | sileconix | 04+ | 3000 |
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| TN0200-T1 | sileconix | 04+ | New & Original | 3000 |
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TN0200-T1 Datasheet
TN0200-T1 Price Permanent short circuit condition with power dis- sipation leading to chip overheating and activation of the thermal shut-down leads to the thermal os- cillation. The junction temperature difference be- tween the switch ON and OFF points is the ther- mal hysteresis of the thermal protection. This hysteresis together with the thermal impedance and ambient temperature determines the fre- quency of this thermal oscillation, its typical val- ues are in the range of 10kHz. TN0200-T1 on stock DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ...designed for general-purpose amplifier and low speed switching applications FEATURES: ' Collector-Emitter Sustaining Voltage- VCEOt:SUS) = 60 V (Min) - BDV64,BDV65 = 80 V (Min) - BDV64A,BDV65A = 100 V (Min) - BDV64B,BDV65B ' Collector-Emitter Saturation Voltage Vc Lat) - 2_0V (Max.)@} lc = 5.0 A * Mon ithic Construction with Built-in Base-Emitter Shunt Resistor |
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