| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
TN2540ND Datasheet
TN2540ND Price Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. TN2540ND on stock AOSaLLJTE MAXIMUhrl RATINGS Ma)cimurn I~rnp~ratur~s Storage Temperarure .-55t:r150'C JunctionTm 1r:}04C MaxLrnum Nluimurn PrDis$ipn (Ja - 25 'c] To~uP Power Dissipation.rriW Maiimuml5a"d CunITr 25 'C} 2S\AI37(V25A137EIA vcao Coilictor tO aaseVI -200 V VCEO CollecmrEmitter Voltage To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE to VIL, and OE to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The "Byte Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequence. An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables indicate the address range that each sector occupies. A "sector address" consists of the address inputs required to uniquely select a sector. See the "Command Definitions" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. |
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