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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TN4-25599-13.000MHZ TOYO  3*6    IN STOCK. Please se  1000 
    donglong Technology (HK) Elect..
  • Contact:lili
  • Tel:86-755-83642972
  • Fax:
  • Email: jack@hkzric.com
TN4-25599-13.000MHZ TOYO  3*6       1000 
    Shen Zhen JinShengDa Electroni..
  • Contact:ms
  • Tel:86-755-61333812/813/814/815
  • Fax:86-755-61333820
  • Email: lulu.889@163.com

TN4-25599-13.000MHZ Datasheet
FUNCTION The M5M5W416CWG is organized as 262144-words by 16-bit. These devices operate on a single +1.65~2.3V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. The operation mode are determined by a combination of the device control inputs BCl , BC2 , S1, S2 , W and OE. Each mode is summarized in the function table. A write operation is executed whenever the low level W overlaps with the low level BCl and/or BC2 and the low level Sl and the high level S2. The address(AO~A17) must be set up before the write cycle and must be stable during the entire cycle. A read operation is executed by setting W at a high level and OE at a low level while BCl and/or BC2 and S1 and S2 are in an active state(S1=L,S2=H). When setting BCl at the high level and other pins are in an activ e stage , upper-by te are in a selectable mode in which both reading and writing are enabled, and lower- byte are in a non-selectable mode. And when setting BC2 at a high level and other pins are in an active stage, lower-byte are in a selectable mode and upper- byte are in a non-selectable mode.
TN4-25599-13.000MHZ Price

Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -40 V
Emitter-base voltage (Collector open) VEBO -5 V
Collector current Ic -1.5 A
Peak collector current ICP 3 A
Collector power dissipation (Tc = 250C) Pc 10 W
Junction temperature Ti 150 oC
Storage temperature Tstg -55 to +150 oC


TN4-25599-13.000MHZ on stock

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DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resul- ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.