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suppliers of TN80C188XL-10 and PDF data of TN80C188XL-10

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TN80C188XL-10 Intel  PLCC  null    4000 
    Apogee Electronics (HK) Co.,Lt..
  • Contact:Hu
  • Tel:86-755-88397815
  • Fax:
  • Email: apogee@hkin.com
TN80C188XL-10 PLCC    INTEL     
    wrightway electronics limited
  • Contact:alex
  • Tel:86-755-89537661
  • Fax:
  • Email: info@wrightway.cn

TN80C188XL-10 Datasheet

Frequency Cas Latency tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD tDAL U nit
166MHz ( 6.Ons ) 3 1 0 12 7 3 2 3 2 6 tCK


TN80C188XL-10 Price
Note 5: Shunt mode regulation is measured with theinput open. With the input connected, shunt mode current can be reduced to OmA Load regulation will remain the same. Note 6: RMS noise is measured with a 2-pole highpass filter at 10Hz and a 2-polelowpass filter at lkHz The resulting output is full-wave rectified End then integrated for a fixed period, making the final reading an average as opposed to RMS. Correction factors are used to convert from average to RMS and correct for the non-ided bandpass of the filters. Peak-to-peak noise is measured with a single highpass filter at O.llt and a 2-polelowpass filter at 10Hz The unit is enclosed in a still-air environment to eliminate thermocouple effects on theleads. Test time is 10 seconds. Note 7: Consult factory for units with long term stability data
TN80C188XL-10 on stock
Note: A K3NR with DC supply voltage requires approximately l A DC as control power supply current the moment the K3NR is turned ON. Do not forget to take this into consideration when using several K3NR units. When the K3NR is not in measuring operation (e.g., the K3NR has been just turned ON or is operating for startup compensation time), the display will read00000 and all outputs will be OFF.

Limits
SYmbO Parameter Test conditions Min Typ Max Unit
ICEX Collector cutoff current VCE=1200V, VEB=2V 4 0 mA
ICB Collector cutoff current VCB=1200V, Emitter open 4 0 mA
IEB Emitter cutoff current VEB=7V 800 mA
VCE (sat) Collector-emitter saturation voltage 3 0 V
VBE (satl Base-emitter saturation voltage lc=200A, IB=4A 3 5 V
-VCEO Collector-emitter reverse voltage -lc=200A (diode forward voltage) 1 8 V
hFE DC current gain lc=200A, VCE=5V 75
ton 3 0
ts Switching time Vcc=600V, lc=200A, IBI=-IB2=4A 1 5
tf 3 0
Rth lj-c)O Thermal resistance Transistor part 0 08 Yc/w
Rtri lj-clR (junction to casel Diode part 0 35 YC/W
Rth lc-f) Contact thermal resistance (case to fin) Conductive grease applied 0 04 YC/W