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TN80C196DB12 Datasheet

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TN80C196DB12 Price

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCB	-20	V
Collector to emitter voltage	VCE	-20	V
Emitter to base voltage	VEB	-10	V
Collector current (DC)	IC(DC)	-2.0	A
Collector current (Pulse)	IC{pulse)+	-3.0	A
Base current (DC)	IB(DC)	-0.04	A
Total power dissipation	PT++	2.0	W
Junction temperature	Ti	150	oC
Storage temperature	Tstg	-55 to +150	oC

TN80C196DB12 on stock

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9.0 General Description The K4H510838D / K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 words by 8/16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up t0 400Mb/s per pin. I/0 transactions are possible on both edges of DQS. Range of operating fre- quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem- ory system applications.

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