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TN87C196KB16W Datasheet

Parameters	10BQ	Units	Conditions
VFM Max. Forward Voltage Drop (1)	0.420	v	@ 1A	T= 25 0C
VFM Max. Forward Voltage Drop (1)	0 470	v	@ 2A	T= 25 0C
VFM Max. Forward Voltage Drop (1)	0 300	v	@ 1A	Ti= 125 0C
VFM Max. Forward Voltage Drop (1)	0 370	v	@ 2A	Ti= 125 0C
	0 5	mA	T= 25 0C
IRM Max. Reverse Leakage Current (1)	5 0	mA	T= 100 0C	VR= rated VR
IRM Max. Reverse Leakage Current (1)	15	mA	T= 125 0C	VR= rated VR
CT Max. Junction Capacitance	200	pF	VR = 5VDC, (test signal range 100KHz t0 1Mhz) 250C
Ls Typical Series Inductance	2.0	nH	Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change (Rated VR)	10000	V/lJS

TN87C196KB16W Price

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may aect device reliability Moisture Sensitivity Level (MSL) Rating Level-3-260C-168HR
TN87C196KB16W on stock

VIN	2.5 t0 5.5	V
Ambient Operating Temperature Range	0 to +70	oC
Load Current	0 10 150	mA
COUT	O t0 10	F
~ 2004 California Micro Devices Corp. All rights reserved	01/20/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 A Tel: 408.263.3214 Fax: 408.263.7846 A www.calmicro.com 3

PIN	DESCRIPTION
1 2 3	base emitter collector

Suppliers Datasheet
		Exact Matc