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TND011MP Datasheet

Items		Symbols	Ratings	Units
]L·		VcB	1200	V
]·- v f~a		VCE	1200	V
]-iy		VCEO<SUS)		V
iyK		VEB	10	V
	DC	le	300	A
]L	Ims	ICP	600	A
]L	DC	-lc	300	A
	DC	IB	16	A
	Ims	I	32	A
]L	Transistor	Pc	2000	W
y I- l't~		Po	100	W
		T_	+150
		Tste	- 40+125	C
		m	430	g
	AC.lmin	VisD	2500	V
		Mounting~l	3.5	Nm
hJu			1.7	Nm
hJu		Terminals2	4 5	N-m

TND011MP on stock

Items		Symbols	RatinE~s	Units
]Lf·		VCED	600	V
]L·y		VcEO	600	V
]L·		VCEO(SUS)	450	V
-y		VEBO	10	V
	DC	fc	400	A
]	Ims	ICP	800	A
]	DC	-IC	400	A
	DC	lB	24	A
K	1mS	lBP	48	A
]	Transislor	Pe	1500	W
y zF		PD	100	W
		Tj	+150	oc
		Tstg	-40+ L25	oc
		m	470	g
	AC.lmin	vis	2500	V
		MountingXl	3 5	N-m
h JL			1.7	Nm
h JL		Terminals ~:< C	4.5	Nm

Parameters	Symbol	Limit Values			Unit	Test
Parameters	Symbol	min	typ.	max	Unit	Conditions
Frequency range	f	880		91 5	MHz
Supply current without RF	IDO		1.6		A
Supply current with RF	IDHF		1.2		A	Pin=12 dBm
Small signal gain	G		33.0		dB	VD = 2.8 V, Pir, = - 10 dBm
Power gain	Gp		20.5		dB	VD = 2.8 V, Pin = 12 dBm
Output Power	Pout	32.1	32.5		dBm	VD = 2.8 V, Pin = 12 dBm
Output Power	Pout	34.0	34.5		dBm	VD = 3.5 V, Pin = 12 dBm
Output Power	Pout	35.8	36.3		dBm	VD = 4.8 V, Pin = 12 dBm
Overall Power added Efficiency	T1	47	53		%	VD = 2.8 V, Pin = 12 dBm
Overall Power added Efficiency	T1	50	55		%	VD = 3.5 V or VD = 4.8 V, Pin = 12 dBm
Noise Power in RX (935 - 960 MHz)	RX		- 80		dBm	Pin = 12 dBm, Pout = 32.5 dBm, 100 kHz RBW
HarmOnlCS	H (2 fo) H (3 fo	40 40	43 43		dBc	VD = 2.8 V, Pin = 10 dBm, Pout = 32.5 dBm
Stability all spurious outputs< - 60 dBc, VSWR load, all phase angles			1 01
Input VSWR			21	2.21		VD=2.8 V