TND311 Datasheet| CHARACTERISTIC | SYMBOL | RATING | UNIT | | Collector-Base Voltage | VCBO | 40 | v | | Collector-Emitter Voltage | VCEO | 15 | v | | Emitter-Base Voltage | VEBO | 5 | V | | Collector Current | IC | 200 | mA | | Base Current | IB | 40 | mA | | Collector Power Dissipation | PC | 100 | mW | | Junction Temperature | Tj | 125 | oC | | Storage Temperature Range | Tstg | - 55125 | oC | | | | | TND311 Price General Description The MIC2224 is a high eiciency 2MHz PWM synchronous buck switching regulator optimized for powering 2.5G and 3G CDMA RF Power Amplifiers. The output voltage of MIC2224 can be dynamically adjusted with an external DAC to maximize PA efficiency versus required output power. When the PA requires the highest power, the DAC can be used to enable a low on-resistance, 40mQ, bypass switch that powers the PA directly from the battery. TND311 on stock| VCE = -10 V | | | | | | - | | | | T. = 25'C | | | | | | | | | | | | | | | | | jj | | | | | | | | | | | | | | | | | | | | | | | | j | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | jf | | | | | | | | | | | | f | | | | | | | | | | | | | | | | | | | | | | | | | jf | | | | | | | | | | | | | | | | | | | | | | | |
| Pin No. | Symbol | Description | | LQFP (X18) | LQFP (X36) | | 37 36 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49, 50, 83 84 80 | 37 36 35, 34, 33, 32, 100, 99, 82, 81, 45, 46, 47, 48, 49, 50, 83, 84 44 | AO A1 A2 - A9 A11 - A18 A19 A10 | Synchronous Address Inputs : These inputs are registered and must meet the setup and hold times around the rising edge of CLK. AO and Al are the two lest significant bits (LSB) of the address field and set the internal burst counter if burst is desired. | | 93 (BW ) 94 (BW2) | 93 (BW ) 94 (BW2) 95 (BW3) 96 (BW4) | BW1 BW2 BW3 BW4 | Synchronous Byte Write Enables : These active low inputs allow individual bytes to be written when a WRITE cycle is active and must meet the setup and hold times around the rising edge of CLK. BYTE WRITEs need to be asserted on the same cycle as the address, BWs are associated with addresses and apply to subsequent data. BWl controls l/Oa pins; BW2 controls l/Ob pins; BW3 controls l/Oc pins; BW4 controls l/Od pins. | | 89 | 89 | CLK | Clock: This signal registers the address, data, chip enables, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock are rising edge. | | 98 | 98 | CE | Synchronous Chip Enable : This active low input is used to enable the device. This input is sampled only when a new external address is loaded (ADV/LD LOW). | | 92 | 92 | CE2 | Synchronous Chip Enable : This active low input is used to enable the device and is sampled only when a new external address is loaded (ADV/LD LOW). This input can be used for memory depth expansion. | | 97 | 97 | CE2 | Synchronous Chip Enable : This active high input is used to enable the device and is sampled only when a new external address is loaded (ADV/LD LOW). This input can be used for memory depth expansion. | | 86 | 86 | OE | Output Enable : This active low asynchronous input enables the data l/0 0utput drivers. | | 85 | 85 | ADV/LD | Synchronous Address Advance/Load : When HIGH, this input is used to advance the internal burst counter, controlling burst access after the external address is loaded. When HIGH, R/W is ignored. A LOW on this pin permits a new address to be loaded at CLK rising edge. | | 87 | 87 | CEN | Synchronous Clock Enable : This active low input permits CLK to propagate throughout the device. When HIGH, the device ignores the CLK input and effectively internally extends the previous CLK cycle. This input must meet setup and hold times around the rising edge of CLK. | | | | | |