| Symbol | Parameter | Va | ue | Unit |
| STP9NB60 | STP9NB60FP |
| VDS | Drain-source Voltage (VGS = 0) | 600 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kl | 600 | V |
| VGS | Gate-source Voltage | ±30 | V |
| ID | Drain Current (continuous) at Te = 25 0C | 9.0 | 9.0() | A |
| ID | Drain Current (continuous) at Te = 100 0C | 5.7 | 5.7() | A |
| IDM | Drain Current (pulsed) | 36 | 36 | A |
| Ptot | Total Dissipation at Te = 25 0C | 125 | 40 | W |
| | Derating Factor | 1.0 | 0.32 | w/oC |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
| Vls0 | Insulation Withstand Voltage (DC) | | 2000 | V |
| Tstg | Storage Temperature | -65 t0 150 | oC |
| Ti | Max. Operating Junction Temperature | 1 50 | oC |
| | | | |
