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TNETD3200RGJC Datasheet

Parameter Conditions Symbol Min Typ Max Unit
Repetitive peak reversevoltage VRRM 50 v
Reverse voltage VR 45 v
Average forward current 10 200 mA
Forward current ,surge peak 8.3 ms single half sine-wave superimposed on rate load( JEDEC method) IFSM 2000 mA
Power Dissipation PD 150 mW
Storage temperature TSTG -40 +125 oc
Junction temperature Tj -40 +125 c


TNETD3200RGJC Price
Provides two RAS lines (two banks supported) DRAM address multiplexing on standard address bus Programmable up to three wait states 100 nS DRAM for zero wait states at 20 MHz 80 nS DRAM for zero wait states at 25 MHz CAS before RAS refresh and refresh support during system reset
TNETD3200RGJC on stock

Calculate RPULL_UP
RPULL2
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Calculate RVDC [ C lRV4. RVDC - \ 5.1 1 VA CTURA,-ON
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Select RFMIN Use Graph 5 0r Graph 6
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Calculate Rcs I ICN,.,
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Select & Calculate RIPH Use Graph 8 to find IIPH, then calculate RIPH: R,PH = ' Rcs I IPH
Calculate CCPH CCPH = (2.6e - 7) tPH
I
Calculate RMIN Find IMIN (Graph 7) ;alculate (pMIN (Equations 8 & 9) Find VMIN (Graph 9)


As above As above As above As above As above Captive contact, V groove gasket, braid clamp UG-style item, non-captive contact, V groove gasket Captive contact, pressure sleeve cable clamp As above As above As above As above As above As above As above As above